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BFG325 Dataheets PDF



Part Number BFG325
Manufacturers NXP
Logo NXP
Description NPN 14 GHz wideband transistor
Datasheet BFG325 DatasheetBFG325 Datasheet (PDF)

BFG325/XR NPN 14 GHz wideband transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. 1.2 Features and benefits  High power gain  Low noise figure  High transition frequency  Gold metallization ensures excellent reliability 1.3 Applications  Intended for Radio Frequency (RF) front end applications in the GHz range, such as:  analog and digital cellular t.

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BFG325/XR NPN 14 GHz wideband transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. 1.2 Features and benefits  High power gain  Low noise figure  High transition frequency  Gold metallization ensures excellent reliability 1.3 Applications  Intended for Radio Frequency (RF) front end applications in the GHz range, such as:  analog and digital cellular telephones  cordless telephones (Cordless Telephone (CT), Personal Communication Network (PCN), Digital Enhanced Cordless Telecommunications (DECT), etc.)  radar detectors  pagers  Satellite Antenna TeleVision (SATV) tuners  repeater amplifiers in fiber-optic systems 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VCBO VCEO IC Ptot hFE CCBS collector-base voltage open emitter collector-emitter voltage open base collector current (DC) total power dissipation DC current gain collector-base capacitance Tsp  90 C IC = 15 mA; VCE = 3 V; Tj = 25 C VCB = 5 V; f = 1 MHz; emitter grounded fT transition frequency IC = 15 mA; VCE = 3 V; f = 1 GHz; Tamb = 25 C Min Typ Max Unit - - 15 V - - 6 V - - 35 mA [1] - - 210 mW 60 100 200 - 0.26 0.4 pF - 14 - GHz NXP Semiconductors BFG325/XR NPN 14 GHz wideband transistor Table 1. Quick reference data …continued Symbol Parameter Conditions Gmax s212 NF maximum power gain[2] insertion power gain noise figure IC = 15 mA; VCE = 3 V; f = 1.8 GHz; Tamb = 25 C IC = 15 mA; VCE = 3 V; f = 1.8 GHz; Tamb = 25 C; ZS = ZL = 50  s = opt; IC = 3 mA; VCE = 3 V; f = 2 GHz Min Typ Max Unit - 18.3 - dB - 14 - dB - 1.1 - dB [1] Tsp is the temperature at the soldering point of the collector pin. [2] Gmax is the maximum power gain, if K > 1. If K < 1 then Gmax = MSG, see Figure 4. 2. Pinning information Table 2. Pin 1 2 3 4 Pinning Description collector emitter base emitter Simplified outline Symbol 3 4 1 2 1 3 2, 4 sym086 3. Ordering information Table 3. Ordering information Type number Package Name Description BFG325/XR SC-61AA plastic surface mounted package; reverse pinning; 4 leads 4. Marking Table 4. Marking codes Type number BFG325/XR [1] * = p: made in Hong Kong. Marking code[1] S2* Version SOT143R BFG325_XR Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 September 2011 © NXP B.V. 2011. All rights reserved. 2 of 13 NXP Semiconductors BFG325/XR NPN 14 GHz wideband transistor 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VCBO VCEO VEBO IC Ptot Tstg Tj collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature open emitter open base open collector Tsp  90 C Min [1] 65 - [1] Tsp is the temperature at the soldering point of the collector pin. Max Unit 15 V 6 V 2 V 35 mA 210 mW +175 C 175 C 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-sp) thermal resistance from junction to solder point [1] Tsp is the temperature at the soldering point of the collector pin. 7. Characteristics Conditions Tsp  90 C Typ [1] 405 Unit K/W Table 7. Characteristics Tj = 25 C; unless otherwise specified. Symbol Parameter ICBO hFE CCBS CCES CEBS fT collector-base cut-off current DC current gain collector-base capacitance collector-emitter capacitance emitter-base capacitance transition frequency Gmax maximum power gain[1] s212 insertion power gain NF PL(1dB) IP3 noise figure output power at 1 dB gain compression third order intercept point Conditions IE = 0 A; VCB = 5 V IC = 15 mA; VCE = 3 V VCB = 5 V; f = 1 MHz; emitter grounded VCE = 5 V; f = 1 MHz; base grounded VEB = 0.5 V; f = 1 MHz; collector grounded IC = 15 mA; VCE = 3 V; f = 1 GHz; Tamb = 25 C IC = 15 mA; VCE = 3 V; f = 1.8 GHz; Tamb = 25 C IC = 15 mA; VCE = 3 V; Tamb = 25 C; ZS = ZL = 50  f = 1.8 GHz f = 3 GHz s = opt; IC = 3 mA; VCE = 3 V; f = 2 GHz IC = 15 mA; VCE = 3 V; f = 1.8 GHz; Tamb = 25 C; ZS = ZL = 50  IC = 15 mA; VCE = 3 V; f = 1.8 GHz; Tamb = 25 C; ZS = ZL = 50  Min Typ Max Unit - - 15 nA 60 100 200 - 0.26 0.4 pF - 0.27 - pF - 0.53 - pF - 14 - GHz - 18.3 - dB - 14 - dB - 10 - dB - 1.1 - dB - 8.7 - dBm - 19.4 - dBm BFG325_XR Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 September 2011 © NXP B.V. 2011. All rights reserved. 3 of 13 NXP Semiconductors BFG325/XR NPN 14 GHz wideband transistor [1] Gmax is the maximum power gain, if K > 1. If K < 1 then Gmax = MSG, see Figure 4. K is the Rollet stability factor: .


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