Document
BFG325/XR
NPN 14 GHz wideband transistor
Rev. 2 — 15 September 2011
Product data sheet
1. Product profile
1.1 General description
NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package.
1.2 Features and benefits
High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability
1.3 Applications
Intended for Radio Frequency (RF) front end applications in the GHz range, such as: analog and digital cellular telephones cordless telephones (Cordless Telephone (CT), Personal Communication Network (PCN), Digital Enhanced Cordless Telecommunications (DECT), etc.) radar detectors pagers Satellite Antenna TeleVision (SATV) tuners repeater amplifiers in fiber-optic systems
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VCBO VCEO IC Ptot hFE
CCBS
collector-base voltage open emitter
collector-emitter voltage open base
collector current (DC)
total power dissipation DC current gain
collector-base capacitance
Tsp 90 C
IC = 15 mA; VCE = 3 V; Tj = 25 C
VCB = 5 V; f = 1 MHz; emitter grounded
fT
transition frequency
IC = 15 mA; VCE = 3 V;
f = 1 GHz; Tamb = 25 C
Min Typ Max Unit
-
-
15 V
-
-
6
V
-
-
35 mA
[1] -
-
210 mW
60 100 200
-
0.26 0.4 pF
-
14 -
GHz
NXP Semiconductors
BFG325/XR
NPN 14 GHz wideband transistor
Table 1. Quick reference data …continued
Symbol Parameter
Conditions
Gmax s212
NF
maximum power gain[2] insertion power gain noise figure
IC = 15 mA; VCE = 3 V; f = 1.8 GHz; Tamb = 25 C
IC = 15 mA; VCE = 3 V; f = 1.8 GHz; Tamb = 25 C; ZS = ZL = 50
s = opt; IC = 3 mA; VCE = 3 V; f = 2 GHz
Min Typ Max Unit
-
18.3 -
dB
-
14 -
dB
-
1.1 -
dB
[1] Tsp is the temperature at the soldering point of the collector pin. [2] Gmax is the maximum power gain, if K > 1. If K < 1 then Gmax = MSG, see Figure 4.
2. Pinning information
Table 2. Pin 1 2 3 4
Pinning Description collector emitter base emitter
Simplified outline Symbol
3
4
1
2
1
3
2, 4
sym086
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description
BFG325/XR
SC-61AA plastic surface mounted package; reverse pinning; 4 leads
4. Marking
Table 4. Marking codes Type number BFG325/XR
[1] * = p: made in Hong Kong.
Marking code[1] S2*
Version SOT143R
BFG325_XR
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 15 September 2011
© NXP B.V. 2011. All rights reserved.
2 of 13
NXP Semiconductors
BFG325/XR
NPN 14 GHz wideband transistor
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VCBO VCEO VEBO IC Ptot Tstg Tj
collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature
open emitter open base open collector
Tsp 90 C
Min [1] 65 -
[1] Tsp is the temperature at the soldering point of the collector pin.
Max Unit
15 V
6
V
2
V
35 mA
210 mW
+175 C
175 C
6. Thermal characteristics
Table 6. Thermal characteristics Symbol Parameter Rth(j-sp) thermal resistance from junction to solder point
[1] Tsp is the temperature at the soldering point of the collector pin.
7. Characteristics
Conditions Tsp 90 C
Typ [1] 405
Unit K/W
Table 7. Characteristics Tj = 25 C; unless otherwise specified.
Symbol Parameter
ICBO hFE CCBS CCES CEBS fT
collector-base cut-off current DC current gain collector-base capacitance collector-emitter capacitance emitter-base capacitance transition frequency
Gmax
maximum power gain[1]
s212 insertion power gain
NF PL(1dB)
IP3
noise figure output power at 1 dB gain compression third order intercept point
Conditions
IE = 0 A; VCB = 5 V IC = 15 mA; VCE = 3 V VCB = 5 V; f = 1 MHz; emitter grounded VCE = 5 V; f = 1 MHz; base grounded VEB = 0.5 V; f = 1 MHz; collector grounded IC = 15 mA; VCE = 3 V; f = 1 GHz; Tamb = 25 C IC = 15 mA; VCE = 3 V; f = 1.8 GHz; Tamb = 25 C IC = 15 mA; VCE = 3 V; Tamb = 25 C; ZS = ZL = 50
f = 1.8 GHz
f = 3 GHz
s = opt; IC = 3 mA; VCE = 3 V; f = 2 GHz IC = 15 mA; VCE = 3 V; f = 1.8 GHz; Tamb = 25 C; ZS = ZL = 50 IC = 15 mA; VCE = 3 V; f = 1.8 GHz; Tamb = 25 C; ZS = ZL = 50
Min Typ Max Unit
-
-
15 nA
60
100 200
-
0.26 0.4 pF
-
0.27 -
pF
-
0.53 -
pF
-
14
-
GHz
-
18.3 -
dB
-
14
-
dB
-
10
-
dB
-
1.1 -
dB
-
8.7 -
dBm
-
19.4 -
dBm
BFG325_XR
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 15 September 2011
© NXP B.V. 2011. All rights reserved.
3 of 13
NXP Semiconductors
BFG325/XR
NPN 14 GHz wideband transistor
[1] Gmax is the maximum power gain, if K > 1. If K < 1 then Gmax = MSG, see Figure 4.
K is the Rollet stability factor:
.