Document
www.DataSheet4U.com
BUK71/794R1-40BT
TrenchMOS™ standard level FET
Rev. 01 — 4 November 2004 Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. The devices include TrenchPLUS diodes for over-temperature protection. Product availability: BUK714R1-40BT in SOT426 (D2-PAK) BUK794R1-40BT in SOT263B (TO-220AB).
1.2 Features
s Integrated temperature sensor s Very low on-state resistance s Q101 compliant s 175 °C rated.
1.3 Applications
s Electrical Power Assisted Steering s Motors, lamps and solenoids s 12 V loads s General purpose power switching.
1.4 Quick reference data
s s RDSon = 3.4 mΩ (typ) VDS ≤ 40 V s ID ≤ 75 A s Ptot ≤ 272 W.
2. Pinning information
Table 1: Pin 1 2 3 4 5 mb Pinning - SOT426 and SOT263B, simplified outline and symbol Simplified outline
mb mb
Description gate (g) anode (a) drain (d) cathode (k) source (s) mounting base; connected to drain (d)
Symbol
d a
g 1 2 3 4 5
03nm72
s
k
Front view
MBK127
1
5
SOT426 (D2-PAK)
MBL263
SOT263B (TO-220AB)
Philips Semiconductors
BUK71/794R1-40BT
TrenchMOS™ standard level FET
3. Limiting values
Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 Tmb = 100 °C; VGS = 10 V; Figure 2 IDM Ptot Tstg Tj IDR IDRM peak drain current total power dissipation storage temperature junction temperature reverse drain current (DC) peak reverse drain current Tmb = 25 °C Tmb = 25 °C; pulsed; tp ≤ 10 µs unclamped inductive load; ID = 75 A; VDS ≤ 40 V; VGS = 10 V; RGS = 50 Ω; starting Tmb = 25 °C Human Body Model; C = 100 pF; R = 1.5 kΩ
[1] [2] [1] [2] [2]
Conditions RGS = 20 kΩ
Min −55 −55 -
Max 40 40 ±20 187 75 75 748 272 +175 +175 187 75 748 1.5
Unit V V V A A A A W °C °C A A A J
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tmb = 25 °C; Figure 1
Source-drain diode
Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Electrostatic discharge Vesd Electrostatic discharge voltage; pins 1,3,5 4 kV
[1] [2]
Current is limited by power dissipation chip rating. Continuous current is limited by package.
9397 750 13954
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 01 — 4 November 2004
2 of 15
Philips Semiconductors
BUK71/794R1-40BT
TrenchMOS™ standard level FET
120 Pder (%)
03na19
200 ID (A) 150
03nm69
80
100
40 50 Capped at 75 A due to package
0 0 50 100 150 200 Tmb (°C)
0 0 50 100 150 200 Tmb (°C)
P tot P der = ---------------------- × 100 % P °
tot ( 25 C )
VGS ≥ 10 V
Fig 1. Normalized total power dissipation as a function of mounting base temperature.
Fig 2. Continuous drain current as a function of mounting base temperature.
103 ID (A)
03nm68
limit RDSon = VDS/ ID
tp = 10 µs
102
100 µs
1 ms Capped at 75 A due to package D.C. 10 ms 10 100 ms
1 10-1
1
10
VDS (V)
102
Tmb = 25 °C; IDM single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 13954
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 01 — 4 November 2004
3 of 15
Philips Semiconductors
BUK71/794R1-40BT
TrenchMOS™ standard level FET
4. Thermal characteristics
Table 3: Rth(j-mb) Rth(j-a) Thermal characteristics Conditions Figure 4 Min Typ Max Unit 0.55 K/W thermal resistance from junction to mounting base thermal resistance from junction to ambient SOT263B (TO-220AB) SOT426 (D2-PAK) vertical in still air minimum footprint; mounted on a PCB 60 50 K/W K/W Symbol Parameter
4.1 Transient thermal impedance
1 Z th(j-mb) (K/W)
03ni64
δ = 0.5
10-1
0.2 0.1 0.05 0.02
10-2
P
δ=
tp T
single shot
tp T t
10-3 10-6 10-5 10-4 10-3 10-2 10-1 1 tp (s) 10
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 13954
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 01 — 4 November 2004
4 of 15
Philips Semiconductors
BUK71/794R1-40BT
TrenchMOS™ standard level FET
5. Characteristics
Table 4: Characteristics Tj = 25 °C unless otherwise specified Symbol V(BR)DSS Parameter drain-source breakdown voltage Conditions ID = 0.25 mA; VGS = 0 V Tj = 25 °C Tj = −55 °C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 Tj = 25 °C Tj = 175 °C Tj = −55 °C IDSS drain-source leakage current VDS = 40 V; VGS = 0 V Tj = 25 °C Tj = 175 °C IGSS RDSon gate-source leakage current drain-source on-state resistance VGS = ±20 V; VDS = 0 V VGS = 10 V; ID = 50 A; Figure 7 and 8 Tj = 25 °C Tj = 175 °C VF SF temperature sense diode forward voltage temperature sense diode temperature coefficient total gate charge gate-to-source charge gate-to-drain (Miller) charge input capacitance output.