Power MOSFETs
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HiPerFETTM Power MOSFETs
Single MOSFET Die
Preliminary data sheet
Symbol VDSS VDGR VGS VGSM ID25 ID...
Description
www.DataSheet4U.com
HiPerFETTM Power MOSFETs
Single MOSFET Die
Preliminary data sheet
Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C (MOSFET chip capability) External lead (current limit) TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W TC = 25°C
IXFK 180N10 IXFX 180N10
VDSS ID25
RDS(on)
= 100 V = 180 A = 8 mW
trr £ 250 ns
Maximum Ratings 100 100 ±20 ±30 180 76 720 180 60 3 5 560 -55 ... +150 150 -55 ... +150 300 0.9/6 V V V V A A A A mJ J V/ns W °C °C °C °C Nm/lb.in. 6 10 g g
PLUS 247TM (IXFX)
G
D (TAB) D
TO-264 AA (IXFK)
G D S
(TAB)
G = Gate S = Source
D = Drain TAB = Drain
Features International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic rectifier
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 100 2.0 V 4.0 V ±100 nA TJ = 25°C TJ = 125°C 100 mA 2 mA 8 mW
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 3mA VDS = VGS, ID = 8mA VGS = ±20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 Note 1
Applications DC-DC converters Battery chargers Switched-mode an...
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