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PBSS305PZ
80 V, 4.5 A PNP low VCEsat (BISS) transistor
Rev. 01 — 20 September 2006 Product data she...
www.DataSheet4U.com
PBSS305PZ
80 V, 4.5 A
PNP low VCEsat (BISS)
transistor
Rev. 01 — 20 September 2006 Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS)
transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS305NZ.
1.2 Features
I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional
transistors
1.3 Applications
I I I I I High-voltage DC-to-DC conversion High-voltage MOSFET gate driving High-voltage motor control High-voltage power switches (e.g. motors, fans) Automotive applications
1.4 Quick reference data
Table 1. Symbol VCEO IC ICM RCEsat
[1]
Quick reference data Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resistance single pulse; tp ≤ 1 ms IC = −4 A; IB = −200 mA
[1]
Conditions open base
Min -
Typ 61
Max −80 −4.5 −9 87
Unit V A A mΩ
Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
Philips Semiconductors
PBSS305PZ
80 V, 4.5 A
PNP low VCEsat (BISS)
transistor
2. Pinning information
Table 2. Pin 1 2 3 4 Pinning Description base collector emitter collector
1 2 3 3
sym028
Simplified outline
4
Symbol
2, 4 1
3. Ordering information
Table 3. Ordering information Package Name PBSS305PZ SC-73 Description Ve...