PBSS306NX

www.DataSheet4U.com PBSS306NX 100 V, 4.5 A NPN low VCEsat (BISS) transistor Rev. 01 — 21 August 2006 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS306PX. 1.2 Features I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications I I I I I High-voltage DC-to-DC conversion High-voltage MOSFET gate driving High-voltage motor control High-voltage power switches (e.g. motors, fans) Automotive applications 1.4 Quick reference data Table 1. Symbol VCEO IC ICM RCEsat [1] Quick reference data Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resistance single pulse; tp ≤ 1 ms IC = 4 A; IB = 200 mA [1] Conditions open base Min - Typ 40 Max 100 4.5 9 56 Unit V A A mΩ Pulse test: tp ≤ 300 µs; δ ≤ 0.02. Philips Semiconductors PBSS306NX 100 V, 4.5 A NPN low VCEsat (BISS) transistor 2. Pinning information Table 2. Pin 1 2 3 Pinning Description emitter collector base 3 2 1 3 1 sym042 Simplified outline Symbol 2 3. Ordering information Table 3. Ordering information Package Name PBSS306NX SC-62 Description Versi...