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PBSS306PZ
100 V, 4.1 A PNP low VCEsat (BISS) transistor
Rev. 01 — 20 September 2006 Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS306NZ.
1.2 Features
I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
I I I I I High-voltage DC-to-DC conversion High-voltage MOSFET gate driving High-voltage motor control High-voltage power switches (e.g. motors, fans) Automotive applications
1.4 Quick reference data
Table 1. Symbol VCEO IC ICM RCEsat
[1]
Quick reference data Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resistance single pulse; tp ≤ 1 ms IC = −4 A; IB = −400 mA
[1]
Conditions open base
Min -
Typ 56
Max −100 −4.1 −8.2 80
Unit V A A mΩ
Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
Philips Semiconductors
PBSS306PZ
100 V, 4.1 A PNP low VCEsat (BISS) transistor
2. Pinning information
Table 2. Pin 1 2 3 4 Pinning Description base collector emitter collector
1 2 3 3
sym028
Simplified outline
4
Symbol
2, 4 1
3. Ordering information
Table 3. Ordering information Package Name PBSS306PZ SC-73 Description Version plastic surface-mounted package with increased heatsink; SOT223 4 leads Type number
4. Marking
Table 4. Marking codes Marking code S306PZ Type number PBSS306PZ
PBSS306PZ_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 20 September 2006
2 of 14
Philips Semiconductors
PBSS306PZ
100 V, 4.1 A PNP low VCEsat (BISS) transistor
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC ICM Ptot Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current peak collector current total power dissipation single pulse; tp ≤ 1 ms Tamb ≤ 25 °C
[1] [2] [3]
Conditions open emitter open base open collector
Min −65 −65
Max −100 −100 −5 −4.1 −8.2 0.7 1.7 2.0 150 +150 +150
Unit V V V A A W W W °C °C °C
Tj Tamb Tstg
[1] [2] [3]
junction temperature ambient temperature storage temperature
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. Device mounted on a ceramic PCB, Al2O3, standard footprint.
2.5 Ptot (W) 2.0
(1) (2)
006aaa560
1.5
1.0
(3)
0.5
0 −75
−25
25
75
125 175 Tamb (°C)
(1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, mounting pad for collector 6 cm2 (3) FR4 PCB, standard footprint
Fig 1. Power derating curves
PBSS306PZ_1
© Koninklijke Philips Electr.