PBSS4160DPN

www.DataSheet4U.com PBSS4160DPN 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor Rev. 01 — 3 June 2004 Objective data sheet 1. Product profile 1.1 General description NPN/PNP low VCEsat (BISS) transistor pair in a SOT457 (SC-74) plastic package. 1.2 Features s s s s Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency, reduces heat generation Reduces printed-circuit board area required. 1.3 Applications s Power management x DC-to-DC conversion x Supply line switching s Peripheral driver x Inductive load drivers (e.g. relays, buzzers and motors) x Driver in low supply voltage applications (e.g. lamps and LEDs). 1.4 Quick reference data Table 1: Symbol VCEO IC ICRP RCEsat Quick reference data Parameter collector-emitter voltage collector current (DC) repetitive peak collector current equivalent on-resistance Conditions Min Typ Max NPN 60 1 2 250 PNP −60 −1 −1.5 330 V A A mΩ Unit Philips Semiconductors PBSS4160DPN 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor 2. Pinning information Table 2: Pin 1, 4 2, 5 6, 3 Discrete pinning Description emitter TR1; TR2 base TR1; TR2 collector TR1; TR2 TR1 1 2 3 SOT457 Simplified outline 6 5 4 Symbol 6 5 4 TR2 1 2 sym019 3 3. Ordering information Table 3: Ordering information Package Name PBSS4160DPN Description plastic surface mounted package; 6 leads Version SOT457 Type number 4. Marking Table 4: Marking Marking code [1] B4 Type number PBSS4160DPN [1] Made in Malaysia. 9397 ...