PBSS9110X

www.DataSheet4U.com PBSS9110X 100 V, 1 A PNP low VCEsat (BISS) transistor Rev. 01 — 2 May 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package. NPN complement: PBSS8110X. 1.2 Features s s s s SOT89 package Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency leading to less heat generation 1.3 Applications s Major application segments: x Automotive 42 V power x Telecom infrastructure x Industrial s Peripheral driver: x Driver in low supply voltage applications (e.g. lamps and LEDs) x Inductive load driver (e.g. relays, buzzers and motors) s DC-to-DC conversion 1.4 Quick reference data Table 1: Symbol VCEO IC ICM RCEsat [1] Quick reference data Parameter collector-emitter voltage collector current (DC) peak collector current collector-emitter saturation resistance single pulse; tp ≤ 1 ms IC = −1 A; IB = −100 mA [1] Conditions open base Min - Typ 170 Max −100 −1 −3 320 Unit V A A mΩ Pulse test: tp ≤ 300 µs; δ ≤ 0.02. Philips Semiconductors PBSS9110X 100 V, 1 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2: Pin 1 2 3 Pinning Description emitter collector base 3 2 1 3 1 006aaa231 Simplified outline Symbol 2 3. Ordering information Table 3: Ordering information Package Name PBSS9110X SC-62 Description plastic surface mounted package; collector pad for good heat transfer; 3...