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PDTD123E series
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
Rev. 01 — ...
www.DataSheet4U.com
PDTD123E series
NPN 500 mA, 50 V resistor-equipped
transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
Rev. 01 — 8 April 2005 Product data sheet
1. Product profile
1.1 General description
500 mA
NPN Resistor-Equipped
Transistors (RET) family.
Table 1: Product overview Package Philips PDTD123EK PDTD123ES [1] PDTD123ET
[1]
Type number
PNP complement JEITA SC-59A SC-43A JEDEC TO-236 TO-92 TO-236AB PDTB123EK PDTB123ES PDTB123ET
SOT346 SOT54 SOT23
Also available in SOT54A and SOT54 variant packages (see Section 2).
1.2 Features
s Built-in bias resistors s Simplifies circuit design s 500 mA output current capability s Reduces component count s Reduces pick and place costs s ±10 % resistor ratio tolerance
1.3 Applications
s Digital application in automotive and industrial segments s Controlling IC inputs s Cost saving alternative for BC817 series in digital applications s Switching loads
1.4 Quick reference data
Table 2: Symbol VCEO IO R1 R2/R1 Quick reference data Parameter collector-emitter voltage output current (DC) bias resistor 1 (input) bias resistor ratio Conditions open base Min 1.54 0.9 Typ 2.2 1.0 Max 50 500 2.86 1.1 Unit V mA kΩ
Philips Semiconductors
PDTD123E series
NPN 500 mA resistor-equipped
transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
2. Pinning information
Table 3: Pin SOT54 1 2 3 input (base) output (collector) GND (emitter)
R1
Pinning Description Simplified outline Symbol
2 1 2 3
001aab347 006aaa145
1
R2
3
SOT54A 1 2 3 input (base) output (collector)...