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PDTD123T Dataheets PDF



Part Number PDTD123T
Manufacturers NXP
Logo NXP
Description 50V resistor-equipped transistors
Datasheet PDTD123T DatasheetPDTD123T Datasheet (PDF)

www.DataSheet4U.com PDTD123T series NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open Rev. 02 — 21 July 2005 Product data sheet 1. Product profile 1.1 General description 500 mA NPN Resistor-Equipped Transistors (RET) family. Table 1: Product overview Package Philips PDTD123TK PDTD123TS [1] PDTD123TT [1] Type number PNP complement JEITA SC-59A SC-43A JEDEC TO-236 TO-92 TO-236AB PDTB123TK PDTB123TS PDTB123TT SOT346 SOT54 SOT23 Also available in SOT54A and SOT54 variant p.

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www.DataSheet4U.com PDTD123T series NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open Rev. 02 — 21 July 2005 Product data sheet 1. Product profile 1.1 General description 500 mA NPN Resistor-Equipped Transistors (RET) family. Table 1: Product overview Package Philips PDTD123TK PDTD123TS [1] PDTD123TT [1] Type number PNP complement JEITA SC-59A SC-43A JEDEC TO-236 TO-92 TO-236AB PDTB123TK PDTB123TS PDTB123TT SOT346 SOT54 SOT23 Also available in SOT54A and SOT54 variant packages (see Section 2). 1.2 Features s Built-in bias resistors s Simplifies circuit design s 500 mA output current capability s Reduces component count s Reduces pick and place costs 1.3 Applications s Digital application in automotive and industrial segments s Controlling IC inputs s Cost saving alternative for BC817 series in digital applications s Switching loads 1.4 Quick reference data Table 2: Symbol VCEO IO R1 Quick reference data Parameter collector-emitter voltage output current bias resistor 1 (input) Conditions open base Min 1.54 Typ 2.2 Max 50 500 2.86 Unit V mA kΩ Philips Semiconductors PDTD123T series NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open 2. Pinning information Table 3: Pin SOT54 1 2 3 input (base) output (collector) GND (emitter) 1 2 3 001aab347 006aaa218 R1 Pinning Description Simplified outline Symbol 2 1 3 SOT54A 1 2 3 input (base) output (collector) GND (emitter) 1 2 3 001aab348 006aaa218 R1 2 1 3 SOT54 variant 1 2 3 input (base) output (collector) GND (emitter) 1 2 3 001aab447 006aaa218 R1 2 1 3 SOT23, SOT346 1 2 3 input (base) GND (emitter) output (collector) 1 1 2 006aaa144 sym012 3 R1 3 2 9397 750 15214 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 21 July 2005 2 of 10 Philips Semiconductors PDTD123T series NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open 3. Ordering information Table 4: Ordering information Package Name PDTD123TK PDTD123TS [1] PDTD123TT [1] Type number Description plastic surface mounted package; 3 leads plastic single-ended leaded (through hole) package; 3 leads plastic surface mounted package; 3 leads Version SOT346 SOT54 SOT23 SC-59A SC-43A - Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9). 4. Marking Table 5: Marking codes Marking code [1] E9 TD123TS *1T Type number PDTD123TK PDTD123TS PDTD123TT [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 6: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO VI Parameter collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO Ptot output current total power dissipation SOT346 SOT54 SOT23 Tstg Tj Tamb [1] Conditions open emitter open base open collector Min - Max 50 50 5 +12 −5 500 250 500 250 +150 150 +150 Unit V V V V V mA mW mW mW °C .


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