FBAS70TW

www.DataSheet4U.com JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS70TW SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode FEATURES z Low Forward Voltage Drop z Fast Switching z Ultra-Small Surface Mount Package APPLICATION For General Purpose Switching Applications, rectifiers For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) (2×2×0.5) unit: mm 1 FBAS70TW Marking:K73 Maximum Ratings @TA=25 Symbol VRRM VRWM VR IF IFSM Pd RθJA TJ TSTG Limits Unit Parameter Peak Repetitive Peak reverse voltage Working Peak Reverse Voltage DC Blocking Voltage Forward Continuous Current Peak forward surge current @<1.0s Power Dissipation Thermal Resistance Junction to Ambient Junction temperature Storage temperature range 70 70 100 150 625 125 -55 to +125 V mA mA mW ℃/W ℃ ℃ Electrical Ratings @TA=25℃ Parameter Forward voltage Reverse current Capacitance between terminals Reverse Recovery Time Symbol VF1 VF2 IR CT trr Min. Typ. Max. 0.41 1 100 2 5 Unit V V nA pF ns Conditions IF=1mA IF=15mA VR=50V VR=0V,f=1MHz IF=IR=10mA Irr=0.1XIR,RL=100Ω Typical Characteristics FBAS70TW Symbol A A1 b D E D1 E1 e L k z Dimensions In Millimeters Min. Max. 0.450 0.550 0.000 0.100 0.150 0.250 1.900 2.100 1.900 2.100 0.420 REF. 0.420 REF. 0.650 TYP. 0.400 REF. 0.300 REF. 0.500 REF. Dimensions In Inches Min. Max. 0.018 0.022 0.000 0.004 0.006 ...