FBAT54TW

www.DataSheet4U.com JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diodes FBAT54TW SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode 1 FEATURES z Low Forward Voltage Drop z Fast Switching APPLICATION Ultra high speed switching, rectifiers For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) F BAT54TW Marking:KLA Maximum Ratings @TA=25℃ Parameter Peak Repetitive reverse voltage DC Blocking Voltage Average Rectified Output Current Power Dissipation Junction temperature Storage temperature range WBFBP-06C (2×2×0.5) unit: mm Symbol VRM VR IO PD TJ TSTG Limits 30 100 150 125 -65-125 Unit V mA mW ℃ ℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Reverse breakdown voltage Reverse voltage leakage current Symbol V(BR) IR unless Test otherwise specified） MIN 30 2 240 320 400 500 1000 10 5 mV MAX UNIT V conditions IR= 100μA VR=25V IF=0.1mA IF=1mA uA Forward voltage VF IF=10mA IF=30mA IF=100mA Total capacitance CT t rr VR=1V,f=1MHz IF=10mA, IR=10mA~1mA RL=100Ω pF nS Reverse recovery time Typical Characteristics Symbol A A1 b D E D1 E1 e L k z Dimensions In Millimeters Min. Max. 0.450 0.550 0.000 0.100 0.150 0.250 1.900 2.100 1.900 2.100 0.420 REF. 0.420 REF. 0.650 TYP. 0.400 REF. 0.300 REF. 0.500 REF. Dimensions In Inches Min. Max. 0.018 0.022 0.000 0.004 0.006 0.010 0.075 0.083 0.075 0.083 0.017 REF. 0.017 REF. 0.026 TYP. ...