HY5DU283222AF

www.DataSheet4U.com HY5DU283222AF 128M(4Mx32) GDDR SDRAM HY5DU283222AF This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.7 / Jun. 2004 1 HY5DU283222AF Revision History Revision No. 0.1 0.11 0.2 0.3 Defined target spec. 500MHz speed bin added Defined IDD specification 1) Added 222MHz with CL3 and tCK_max=10ns at HY5DU283222AF-36 2) Changed VDD_min value of HY5DU283222AF-36 from 2.375V to 2.2V 3) Changed AC parameters value of HY5DU283222AF-28/33 - tRCDRD/tRP : from 6 tCK to 5 tCK - tDAL : from 9 tCK to 8 tCK - tRFC : from 19 tCK to 17 tCK 4) Changed IDD2N target specification 5) Changed tCK_max value of HY5DU283222AF-33/36 from 6ns to 10ns Changed CAS Latency of HY5DU283222AF-28 from CL5 to CL4 Changed tRAS_max Value from 120K to 100K in All Frequency Insert Overshoot/ Under Specification Insert tDSS/ tDSH parameter Added 250MHz/ 200MHz speed bin History Draft Date Nov. 2002 Dec. 2002 Feb. 2003 Mar. 2003 Remark 0.4 0.5 0.6 0.7 June 2003 Aug. 2003 Sep. 2003 Jun. 2004 Rev. 0.7 / Jun. 2004 2 HY5DU283222AF DESCRIPTION The Hynix HY5DU283222 is a 134,217,728-bit CMOS Double Data Rate(DDR) Synchronous DRAM, ideally suited for the point-to-point applications which requires high bandwidth. The Hynix 4Mx32 DDR SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all ...