HY5V22LF

www.DataSheet4U.com HY57V283220(L)T(P)/ HY5V22(L)F(P) 4 Banks x 1M x 32Bit Synchronous DRAM Revision History Revision No. 0.1 History Defined Preliminary Specification 1) 2) 3) 4) 5) 6) Modified FBGA Ball Configuration Typo. Changed Functional Block Diagram from A10 to A11. Changed VDD min from 3.0V to 3.135V. Changed Cap. Value from C11, 3, 5 to 4pf & C12, 3.8 to 4pf. Insert tAC2 Value. Insdrt tRAS & CLK Value. Remark 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Defined IDD Spec. Delited Preliminary. Changed IDD Spec. 133MHz Speed Added Changed FBGA Package Size from 11x13 to 8x13. 1) Changed VDD min from 3.135V to 3.0V. 2) Changed VIL min from VSSQ-0.3V to -0.3V. Modified of size erra. (Page15) (Equation : 13.00 ± 10 -> 13.00 ± 0.10) This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.9 / July 2004 HY57V283220(L)T(P)/ HY5V22(L)F(P) 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V283220(L)T(P) / HY5V22(L)F(P) is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V283220(L)T(P) / HY5V22(L)F(P) is organized as 4banks of 1,048,576x32. HY57V283220(L)T(P) / HY5V22(L)F(P) is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the c...