High Voltage IGBT
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High Voltage IGBT
IXGH 28N120B VCES = 1200 V = 50 A IXGT 28N120B IC25 VCE(sat) = 3.5 V tfi(typ) = ...
Description
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High Voltage IGBT
IXGH 28N120B VCES = 1200 V = 50 A IXGT 28N120B IC25 VCE(sat) = 3.5 V tfi(typ) = 160 ns
Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 5 Ω Clamped inductive load TC = 25°C
Maximum Ratings 1200 1200 ± 20 ± 30 50 28 150 ICM = 120 @ 0.8 VCES 250 -55 ... +150 150 -55 ... +150 300 260 V V V V A A A A
TO-268 (IXGT)
G E C (TAB)
TO-247 AD (IXGH)
G
C (TAB) C E
W °C °C °C °C °C G = Gate, E = Emitter,
C = Collector, TAB = Collector
Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3) (TO-247)
1.13/10Nm/lb.in. TO-247 AD TO-268 6 4 g g
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 2.5 TJ = 25°C 5 25 ± 100 TJ = 125°C 2.8 2.75 3.5 V V µA nA V V
Features High Voltage IGBT for resonant power supplies - Induction heating - Rice cookers International standard packages JEDEC TO-268 and JEDEC TO-247 AD Low switching losses, low V(sat) MOS Gate turn-on - drive simplicity Advantages
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 250 µA , VGE = 0 V = 250 µA, VCE = VGE
VCE = VCES, VGE= 0 V VCE = 0 V, VGE = ±20 V IC = 28A, VGE = 15 V
High power density Suitable for surface mounting Easy to mount with 1 sc...
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