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IXGK35N120C Dataheets PDF



Part Number IXGK35N120C
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description HiPerFAST IGBT
Datasheet IXGK35N120C DatasheetIXGK35N120C Datasheet (PDF)

www.DataSheet4U.com Preliminary Data Sheet HiPerFASTTM IGBT IXGK 35N120C IXGX 35N120C IXGK 35N120CD1 IXGX 35N120CD1 (D1) VCES = 1200 V IC25 = 70 A VCE(sat) = 4.0 V tfi(typ) = 115 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 5 Ω Clamped inductive load TC = 25°C Maximum Ratings 1200 1200 ± 20 ± 30 70 35 140 ICM = .

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www.DataSheet4U.com Preliminary Data Sheet HiPerFASTTM IGBT IXGK 35N120C IXGX 35N120C IXGK 35N120CD1 IXGX 35N120CD1 (D1) VCES = 1200 V IC25 = 70 A VCE(sat) = 4.0 V tfi(typ) = 115 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 5 Ω Clamped inductive load TC = 25°C Maximum Ratings 1200 1200 ± 20 ± 30 70 35 140 ICM = 90 @ 0.8 VCES 350 -55 ... +150 150 -55 ... +150 300 V V V V A A A A W °C °C °C °C TO-264 AA (IXGK) G C E C (TAB) PLUS 247TM (IXGX) G C (TAB) C E Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s G = Gate, E = Emitter, Features C = Collector, TAB = Collector Md Weight Mounting torque (M3) (IXGK) 1.13/10Nm/lb.in. TO-264 AA PLUS247TM 10 6 g g International standard packages JEDEC TO-264 and PLUS247TM ● Low switching losses, low V(sat) ● MOS Gate turn-on - drive simplicity ● Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 2.5 TJ = 25°C TJ = 125°C 5 250 5 ± 100 TJ = 125°C 4.0 3.2 V V µA mA nA V V AC motor speed control DC servo and robot drives ● DC choppers ● Uninterruptible power supplies (UPS) ● Switched-mode and resonant-mode power supplies ● ● BVCES VGE(th) ICES IGES VCE(sat) IC IC = 1 mA, VGE = 0 V = 750 µA, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V Advantages ● ● High power density Easy to mount with 1 screw, (isolated mounting screw hole) Spring clip or clamp assembly possible. DS98961 (10/02) ● © 2002 IXYS All rights reserved IXGK 35N120C IXGX 35N120C Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 30 40 4620 VCE = 25 V, VGE = 0 V, f = 1 MHz 260 90 170 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 28 57 Inductive load, TJ = 25°C IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 5 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG Inductive load, TJ = 125°C IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 5 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 50 27 150 115 3.0 55 31 2.6 220 260 6.2 220 190 S pF pF pF nC nC nC ns ns ns ns IXGK IXGX 35N120CD1 35N120CD1 TO-264 AA Outline (IXGK) gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK IC = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Min. Inches Max. 4.2 mJ ns ns mJ ns ns mJ 0.35 K/W .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 PLUS247TM Outline (IXGX) 0.15 K/W Reverse Diode (FRED) Symbol VF IRM t rr RthJC Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 2.35 32 225 40 36 60 V A ns ns Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) IF = IC90, VGE = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %, TJ = 125°C IF = IC90, VGE = 0 V, -diF/dt = 480 A/µs VR = 540 V TJ =100°C IF = 1 A; -di/dt = 200 A/µs; VR = 30 V TJ = 25 °C Dim. A A1 A2 b b1 b2 C D E e L L1 Q R 5,049,961 5,063,307 0.65 K/W IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 5,187,117 5,237,481 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 5,486,715 5,381,025 6,306,728B1 .


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