MASWSS0117

www.DataSheet4U.com GaAs SPDT 2.7 V High Power Switch DC - 3.0 GHz Features Low Voltage Operation: 2.7 V High IP3: +56 dBm Low Insertion Loss: 0.30 dB at 1 GHz High Isolation: 25 dB at 1 GHz SC70 6-Lead Package 0.5 micron GaAs PHEMT Process MASWSS0117 V2 Functional Block Diagram RF1 39 pF V1 Description M/A-COM’s MASWSS0117 is a GaAs PHEMT MMIC single pole double throw (SPDT) high power switch in a low cost SC70 6-lead package. The MASWSS0117 is ideally suited for applications where high power, low control voltage, low insertion loss, high isolation, small size and low cost are required. Typical applications are for CDMA handset systems that connect separate transceiver and/or GPS functions to a common antenna, as well as other related handset and general purpose applications. The MASWSS0117 can be used in all systems operating up to 3.0 GHz requiring high power at low control voltage. The MASWSS0117 is fabricated using a 0.5 micron gate length GaAs PHEMT process. The process features full passivation for performance and reliability. GND RFC 39 pF RF2 39 pF Pin 6 V2 Pin 1 Pin Configuration Pin No. 1 2 3 4 5 6 Pin Name V2 RFC V1 RF1 GND RF2 Description Vcontrol 2 RF Common Vcontrol 1 RF Port 1 RF Ground RF Port 2 MASWSS0117 orientation in tape Ordering Information1 Part Number MASWSS0117 MASWSS0117TR MASWSS0117TR-3000 MASWSS0117SMB Package Bulk Packaging 1000 piece reel 3000 piece reel Sample Test Board PART NUMBER MASWSS0117 Device Marking PIN 1 ...