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MS2604
RF& MICROWAVE TRANSISTORS S BAND RADAR APPLICATIONS
Features
• • • • • • 2.7 – 3.1 GHz 40 V...
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MS2604
RF& MICROWAVE
TRANSISTORS S BAND RADAR APPLICATIONS
Features
2.7 – 3.1 GHz 40 VOLTS POUT = 25 WATTS GP = 6.2 dB MINIMUM GOLD METALLIZATION INPUT/OUTPUT MATCHING COMMON BASE CONFIGURATION
DESCRIPTION:
The MS2604 is a silicon
NPN bipolar
transistor designed for pulsed S-Band radar applications. The MS2604 is capable of operation over a wide range of pulse widths and duty cycles. Internal impedance matching and gold metalization provide consistent broadband performance and long term reliability.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
VCC IC PDISS TJ TSTG
Parameter
Value
46 4 100 200 -65 to +200
Unit
V A W °C °C
Collector Supply Voltage Device Current Power Dissipation Junction Temperature Storage Temperature
Thermal Data
RTH(J-C) Junction - Case Thermal Resistance 2.0 °C/W
12-05-2002
MS2604
ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC
Symbol
BVCBO BVEBO BVCER ICES HFE IC = 15 mA IE = 2 mA IC = 15 mA VCE = 40 V VCE = 5.0 V
Test Conditions Min.
IE = 0 mA IC = 0 mA RBE = 10 Ω IC = 1.5 A 55 3.5 55 --30
Value Typ.
-----------
Max.
------10 150
Unit
V V V mA ---
DYNAMIC
Symbol
POUT ηc GPE Conditions
Test Conditions Min.
f = 2700 - 3100 MHz PIN = 6.0 W VCC = 40V 25 30 6.2 VCC = 40V f = 2700 - 3100 MHz PIN = 6.0 W f = 2700 - 3100 MHz PIN = 6.0 W VCC = 40V Pulse Width = 100 µsec Duty Cycle = 10%
Value Typ.
-------
Max.
-------
Unit
W % dB
IMPEDANCE DATA
Freq
2.7 GHz 2.9 GHz 3.1 GHz PIN = 6 W VCC = 40 V
ZIN(Ω)
12.0...