RDX080N50

www.DataSheet4U.com RDX080N50 Transistors 10V Drive Nch MOS FET RDX080N50 zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm) TO-220FM 10.0 φ3.2 4.5 2.8 14.0 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Excellent resistance to damage from static electricity. (1)Gate 15.0 12.0 8.0 2.5 1.3 1.2 0.8 2.54 (1) (2) (3) 2.54 0.75 2.6 zApplications Switching zPackaging specifications Package Type RDX080N50 Code Basic ordering unit (pieces) Bulk − 500 (2)Drain (3)Source zInner circuit *1 *2 (1) (2) (3) ∗1 GATE PROTECTION DIODE *2 BODY DIODE (1) Gate (2) Drain (3) Source zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID ∗1 IDP ∗2 IS ISP ∗2 IAS ∗3 EAS ∗4 PD Tch Tstg Limits 500 ±30 ±8 ±32 8 32 8 85 40 150 −55 to +150 Unit V V A A A A A mJ W °C °C Avalanche current Avalanche energy Total power dissipation (Tc=25°C) Channel temperature Range of storage temperature ∗1 Limited only by maximum temperature allowed ∗2 Pw 10µs, Duty cycle 1% ∗4 L = 2.3mH VDD=90V Rg=25Ω starting Tch=25°C ∗3 L = 2.3mH VDD=90V Rg=25Ω zThermal resistance Parameter Channel to case Symbol Rth(ch-c) Limits Unit °C/W 3.125 1/2 RDX080N50 Transistors zElectrical characteristics (Ta=25°C) Parameter Symbol IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS VGS (th) Gate thresho...