RDX100N60

www.DataSheet4U.com RDX100N60 Transistors 10V Drive Nch MOS FET RDX100N60 zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm) TO-220FM 10.0 φ3.2 4.5 2.8 14.0 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Excellent resistance to damage from static electricity. (1)Gate 15.0 12.0 8.0 2.5 1.3 1.2 0.8 2.54 (1) (2) (3) 2.54 0.75 2.6 zApplications Switching zPackaging specifications Package Type RDX100N60 Code Basic ordering unit (pieces) Bulk − 500 (2)Drain (3)Source zInner circuit ∗1 ∗2 (1) (2) (3) ∗1 GATE PROTECTION DIODE ∗2 BODY DIODE (1) Gate (2) Drain (3) Source zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS I D ∗1 IDP ∗2 IS ISP ∗2 IAS ∗3 EAS ∗4 PD Tch Tstg Limits 600 ±30 ±10 ±40 10 40 10 230 45 150 −55 to +150 Unit V V A A A A A mJ W °C °C Avalanche current Avalanche energy Total power dissipation (Tc=25°C) Channel temperature Range of storage temperature ∗1 Limited only by maximum temperature allowed ∗2 Pw 10µs, Duty cycle 1% ∗4 L = 4.0mH VDD=90V Rg=25Ω startingTch=25°C ∗3 L = 4.0mH VDD=90V Rg=25Ω zThermal resistance Parameter Channel to case Symbol Rth(ch-c) Limits 2.78 Unit °C/W 1/2 RDX100N60 Transistors zElectrical characteristics (Ta=25°C) Parameter Symbol IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS IDSS Zero gate voltage drain current VGS (th) Gate thre...