TPC8020-H

www.DataSheet4U.com TPC8020-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High-Speed U-MOSIII) TPC8020-H High-Speed and High-Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High-speed switching Small gate charge: Qg = 23 nC (typ.) Low drain-source ON resistance: R DS (ON) = 6.8 mO (typ.) High forward transfer admittance: |Yfs| =32 S (typ.) Low leakage current: IDSS = 10 µA (max) (V DS = 30 V) Enhancement mode: V th = 1.1 to 2.3 V (V DS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ ) Gate-source voltage Drain current DC (Note 1) Symbol V DSS V DGR V GSS ID IDP PD Rating 30 30 ±20 13 52 Unit V V V A JEDEC JEITA TOSHIBA ? ? 2-6J1B Pulsed (Note 1) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range Weight: 0.080 g (typ.) 1.9 W PD EA S IAR EAR Tch Tstg 1.0 W Circuit Configuration 110 13 0.084 150 −55 to 150 mJ 8 7 6 5 A mJ °C °C 1 2 3 4 Note 1, Note 2, Note 3 and Note 4: See the next page. This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2004-07-06 TPC8020-H Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t...