PMN50XP

www.DataSheet4U.com PMN50XP P-channel TrenchMOS extremely low level FET Rev. 01 — 23 January 2006 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features s Low threshold voltage s Low on-state losses 1.3 Applications s Low power DC-to-DC converters s Load switching s Battery management s Battery powered portable equipment 1.4 Quick reference data s VDS ≤ −20 V s RDSon ≤ 60 mΩ s ID ≤ −4.8 A s QGD = 1.3 nC (typ) 2. Pinning information Table 1: Pin 1, 2, 5, 6 3 4 Pinning Description drain (D) gate (G) source (S) 1 2 3 G S 003aaa671 Simplified outline 6 5 4 Symbol D SOT457 (TSOP6) Philips Semiconductors PMN50XP P-channel TrenchMOS extremely low level FET 3. Ordering information Table 2: Ordering information Package Name PMN50XP TSOP6 Description plastic surface mounted package (TSOP6); 6 leads Version SOT457 Type number 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM Parameter drain-source voltage drain-gate voltage (DC) gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature source current peak source current Tsp = 25 °C Tsp = 25 °C; pulsed; tp ≤ 10 µs Tsp = 25 °C; VGS = −4.5 V; see Figure 2 and 3 Tsp = 100 °C; VGS = −4.5 V; see Figure 2 Tsp = 25 °C; pulsed; tp ≤ 10 µs; see Fi...