IXTY02N50D

High Voltage Power MOSFET N-Channel IXTY02N50D IXTU02N50D IXTP02N50D D VDSX = ID25 =  RDS(on) 500V 200mA 30 TO-252 (IXTY) G S Symbol VDSX VDGX VGSX VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJ TC = 25C TA = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220) TO-252 TO-251 TO-220 Maximum Ratings 500 V 500 V 20 V 30 V 200 mA 800 mA 25 W 1.1 W - 55 ... +150 C 150 C - 55 ... +150 C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 0.35 g 0.40 g 3.00 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSX VGS = -10V, ID = 25A VGS(off) VDS = 25V, ID = 25A IGSX VGS = 20V, VDS = 0V IDSX(off) VDS = VDSX, VGS = -10V RDS(on) ID(on) VGS = 0V, ID = 50mA, Note 1 VGS = 0V, VDS = 25V, Note 1 TJ = 125C Characteristic Values Min. Typ. Max. 500 V - 2.5 - 5.0 V 100 nA 10 A 250 A 20 30  250 mA G S TO-251 (IXTU) D (Tab) G D S D (Tab) TO-220AB (IXTP) GD S D (Tab) G = Gate S = Source D = Drain Tab = Drain Features Normally ON Mode  International Standard Packages  Low RDS(on) HDMOSTM Process Rugged Polysilicon Gate Cell Structure Fast Switching Speed Advantages Easy to Mount Space Savings High Power Density Applications Level Shifting Triggers Solid State Relays Current Regulators © 2...