MA4AGSW1A

www.DataSheet4U.com AlGaAs SPST Non-Reflective PIN Diode Switch FEATURES Ultra Broad Bandwidth: 10 GHz to 50 GHz Functional Bandwidth: 100 MHz to 70 GHz 1.0 dB Insertion Loss, 35 dB Isolation at 50 GHz M/A-COM’s unique patent pending AlGaAs hetero-junction anode technology. Silicon Nitride Passivation Polymide Scratch protection MA4AGSW1A Rev 2.0 MA4AGSW1A LAYOUT DESCRIPTION M/A-COM’s MA4AGSW1A is an Aluminum-Gallium Arsenide anode enhanced, SPST Non-Reflective PIN diode switch. AlGaAs anodes, which utilize M/A-COM’s patent pending hetero-junction technology, produce less loss than conventional GaAs processes, by as much as a 0.3 dB reduction in insertion loss at 50 GHz. These devices are fabricated on a OMCVD eptaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diodes themselves exhibit lower series resistance, lower capacitance, and faster switching speeds than Silicon based devices. They are fully passivated with silicon nitride and have an additional layer of a polymer for scratch protection. The protective coating prevents damage to the junction and the anode airbridges during handling. Offchip bias circuitry is required and allows for maximum design flexibility. ABSOLUTE MAXIMUM RATINGS @TA = +25°C ( Unless otherwise specified ) Parameter Operating Temperature Storage Temperature Junction Temperature Assembly Temperature MAXIMUM RATING -55° TO +125°C -65°C TO +150°C +175°C +300°C for < 10 sec +23 dBm C.W. ...