MA4AGSW5

www.DataSheet4U.com AlGaAs SP5T Reflective PIN Diode Switch V 1.00 MA4AGSW5 Features n n n MA4AGSW5 Layout n n n n Ultra Broad Bandwidth: 50 MHz to 50 GHz 1.7 dB Insertion Loss, 30 dB Isolation at 50 GHz Low Current comsumption. -10 mA for low loss state +10 mA for Isolation state M/A-COM’s unique patent pending AlGaAs hetero-junction anode technology. Silicon Nitride Passivation Polyamide Scratch protection Description M/A-COM’s MA4AGSW5 is an Aluminum-Gallium- Arsenide anode enhanced, SP5T PIN diode switch. AlGaAs anodes, which utilize M/A-COM’s patent pending hetero-junction technology, produce less loss than conventional GaAs processes, by as much as 0.3 dB reduction in insertion loss at 50 GHz. These devices are fabricated on a OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diodes themselves exhibit low series resistance, low capacitance, and fast switching speed. They are fully passivated with silicon nitride and have an additional layer of a polymer for scratch protection. The protective coating prevents damage to the junction and the anode air bridges during handling. Off-chip bias circuitry is required and allows maximum design flexibility. Absolute Maximum Ratings1 @ T= Room Temp. (Unless otherwise specified) Parameter Operating Temperature Storage Temperature RF C.W. Incident Power Breakdown Voltage Bias Current Maximum Rating -55 °C to +125 °C -65 °C to +150 °C + 23 dBm C. W. 25 V +/- 30 mA per ...