NT5SV16M16AT

www.DataSheet4U.com NT5SV64M4AT(L) NT5SV32M8AT(L) NT5SV16M16AT(L) 256Mb Synchronous DRAM Features High Performance: -7K 3 CL=2 fCK tCK tAC tAC Clock Frequency Clock Cycle Clock Access Time 1 133 7.5 — 5.4 -75B, CL=3 133 7.5 — 5.4 -8B, CL=2 100 10 — 6 Units MHz ns ns ns Clock Access Time 2 1. Terminated load. See AC Characteristics on page 37. 2. Unterminated load. See AC Characteristics on page 37. 3. tRP = tRCD = 2 CKs Multiple Burst Read with Single Write Option Automatic and Controlled Precharge Command Data Mask for Read/Write control (x4, x8) Dual Data Mask for byte control (x16) Auto Refresh (CBR) and Self Refresh Suspend Mode and Power Down Mode Standard Power operation 8192 refresh cycles/64ms Random Column Address every CK (1-N Rule) Single 3.3V ± 0.3V Power Supply LVTTL compatible Package: 54-pin 400 mil TSOP-Type II Single Pulsed RAS Interface Fully Synchronous to Positive Clock Edge Four Banks controlled by BA0/BA1 (Bank Select) Programmable CAS Latency: 2, 3 Programmable Burst Length: 1, 2, 4, 8 Programmable Wrap: Sequential or Interleave -7K parts for PC133 2-2-2 operation -75B parts for PC133 3-3-3 operation -8B parts for PC100 2-2-2 operation Description The NT5SV64M4AT, NT5SV32M8AT, and NT5SV16M16AT are four-bank Synchronous DRAMs organized as 16Mbit x 4 I/O x 4 Bank, 8Mbit x 8 I/O x 4 Bank, and 4Mbit x 16 I/O x 4 Bank, respectively. These synchronous devices achieve high-speed data transfer rates of up to 133...