High Voltage Power MOSFET
IXTU01N100 IXTY01N100
VDSS =
ID25 = RDS(on)
1000V 100mA 80
N-Channel Enhancement Mode
TO-251 (IXTU)
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
PD
TJ TJM Tstg
TL TSOLD
FC
Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting force TO-251 TO-252
Maximum Ratings
1000
V
1000
V
20
V
30
V
100
mA
400
mA
25
W
-55 ... +150
C
150
C
-55 ... +150
C
300
°C
260
°C
1.13 / 10
Nm/lb.in.
0.40
g
0.35
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 25A
VGS(th)
VDS = VGS, ID = 25A
IGSS
VGS = 20V, VDS = 0V
IDSS
VDS = 0.8 • VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 50mA, Note 1
Characteristic Values Min. Typ. Max.
1000
V
2.0
4.5 V
50 nA
10 A 200 A
60
80
G D S
TO-252.