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IXTU01N100 Dataheets PDF



Part Number IXTU01N100
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description Power MOSFET
Datasheet IXTU01N100 DatasheetIXTU01N100 Datasheet (PDF)

High Voltage Power MOSFET IXTU01N100 IXTY01N100 VDSS = ID25 =  RDS(on) 1000V 100mA 80 N-Channel Enhancement Mode TO-251 (IXTU) Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting force TO-251 TO-252 Maximum Ratings 1000 V 1000 V 20 V 3.

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High Voltage Power MOSFET IXTU01N100 IXTY01N100 VDSS = ID25 =  RDS(on) 1000V 100mA 80 N-Channel Enhancement Mode TO-251 (IXTU) Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting force TO-251 TO-252 Maximum Ratings 1000 V 1000 V 20 V 30 V 100 mA 400 mA 25 W -55 ... +150 C 150 C -55 ... +150 C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 0.40 g 0.35 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 25A VGS(th) VDS = VGS, ID = 25A IGSS VGS =  20V, VDS = 0V IDSS VDS = 0.8 • VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 50mA, Note 1 Characteristic Values Min. Typ. Max. 1000 V 2.0 4.5 V 50 nA 10 A 200 A 60 80  G D S TO-252 (IXTY) G S D (Tab) D (Tab) G = Gate S = Source D = Drain Tab = Drain Features  International Standard Packages  Fast Switching Times  Avalanche Rated  Rds(on) HDMOSTM Process  Rugged Polysilicon Gate Cell structure Advantages  High Power Density  Space Savings Applications  Level Shifting  Triggers  Solid State Relays  Current Regulators © 2017 IXYS CORPORATION, All Rights Reserved DS98812E(9/17) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 50mA, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 50mA RG = 50 (External) Qg(on) Qgs Qgd VGS = 10V, VDS = 0.5 • VDSS, ID = 50mA RthJC Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = IS, VGS = 0V, Note 1 trr IF = 0.75A, -di/dt = 100A/μs, VR = 25V Note 1: Pulse test, t  300s, duty cycle, d  2%. Characteristic Values Min. Typ. Max. 0.16 S 54.0 pF 6.9 pF 2.0 pF 12 ns 12 ns 40 ns 28 ns 6.9 nC 1.8 nC 3.0 nC 5C/W Characteristic Values Min. Typ. Max. 100 mA 300 mA 1.8 V 1.5 μs IXTU01N100 IXTY01N100 TO-251 Outline 1. Gate 2.Drain 3. Source 4. Drain Dim. A A1 b b1 b2 c c1 D E e e1 H L L1 L2 Millimeter Min. Max. 2.19 2.38 0.89 1.14 0.64 0.89 0.76 1.14 5.21 5.46 0.46 0.58 0.46 0.58 5.97 6.22 6.35 6.73 2.28 BSC 4.57 BSC 17.02 17.78 8.89 9.65 1.91 2.28 0.89 1.27 Inches Min. Max. .086 .094 0.35 .045 .025 .035 .030 .045 .205 .215 .018 .023 .018 .023 .235 .245 .250 .265 .090 BSC .180 BSC .670 .700 .350 .380 .075 .090 .035 .050 TO-252 AA Outline E A b3 L3 c2 4 L4 1 2 3 L1 b2 e ee11 OPTIONAL A1 H A2 L L2 c 0 5.55MIN 1 - Gate 2,4 - Drain 3 - Source 4 6.40 6.50MIN BOTTOM VIEW 2.85MIN 2.28 1.25MIN LAND PATTERN RECOMMENDATION IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 by one or more of the following U.S. patents: 4,860,072 5,017,508 4,881,106 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 ID - MilliAmperes ID - MilliAmperes 200 180 160 140 120 100 80 60 40 20 0 0 Fig. 1. Output Characteristics @ TJ = 25oC VGS = 10V 6V 5V 2 4 6 8 10 12 14 VDS - Volts 200 180 160 140 120 100 80 60 40 20 0 0 Fig. 2. Output Characteristics @ TJ = 125oC VGS = 10V 6V 5V 5 10 15 20 25 30 VDS - Volts Fig. 4. RDS(on) Normalized to ID = 50mA Value vs. Drain Current 3.0 VGS = 10V 2.6 TJ = 125oC 2.2 1.8 TJ = 25oC 1.4 1.0 0.6 0 50 100 150 200 250 300 350 400 450 500 ID - MilliAmperes ID - MilliAmperes RDS(on) - Normalized ID - MilliAmperes IXTU01N100 IXTY01N100 Fig. 2. ExtendedOutput Characteristics @ TJ = 25oC 500 450 VGS = 10V 400 6V 350 300 250 200 150 100 5V 50 0 0 5 10 15 20 25 30 35 40 45 50 VDS - Volts Fig. 3. RDS(on) Normalized to ID = 50mA Value vs. Junction Temperature 3.0 VGS = 10V 2.6 2.2 I D = 200mA 1.8 I D = 100mA 1.4 1.0 0.6 0.2 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Maximum Drain Current vs. Case Temperature 120 100 80 60 40 20 0 -50 -25 0 25 50 75 100 125 150 TC - Degrees Centigrade RDS(on) - Normalized © 2017 IXYS CORPORATION, All Rights Reserved ID - MilliAmperes Fig. 7. Input Admittance 160 140 VDS = 10V 120 100 80 60 TJ = 125oC 40 20 0 3.2 3.6 4.0 4.4 4.8 VGS - Volts TJ = 25oC 5.2 5.6 400 350 300 250 200 150 100 50 0 0.3 Fig. 9. Forward Voltage Drop of Intrinsic Diode TJ = 125oC TJ = 25oC 0.4 0.5 0.6 0.7 0.8 0.9 VSD .


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