Document
High Voltage Power MOSFET
IXTU01N100 IXTY01N100
VDSS =
ID25 = RDS(on)
1000V 100mA 80
N-Channel Enhancement Mode
TO-251 (IXTU)
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
PD
TJ TJM Tstg
TL TSOLD
FC
Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting force TO-251 TO-252
Maximum Ratings
1000
V
1000
V
20
V
30
V
100
mA
400
mA
25
W
-55 ... +150
C
150
C
-55 ... +150
C
300
°C
260
°C
1.13 / 10
Nm/lb.in.
0.40
g
0.35
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 25A
VGS(th)
VDS = VGS, ID = 25A
IGSS
VGS = 20V, VDS = 0V
IDSS
VDS = 0.8 • VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 50mA, Note 1
Characteristic Values Min. Typ. Max.
1000
V
2.0
4.5 V
50 nA
10 A 200 A
60
80
G D S
TO-252 (IXTY)
G
S
D (Tab) D (Tab)
G = Gate S = Source
D = Drain Tab = Drain
Features
International Standard Packages Fast Switching Times Avalanche Rated Rds(on) HDMOSTM Process Rugged Polysilicon Gate Cell structure
Advantages
High Power Density Space Savings
Applications
Level Shifting Triggers Solid State Relays Current Regulators
© 2017 IXYS CORPORATION, All Rights Reserved
DS98812E(9/17)
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs
VDS = 10V, ID = 50mA, Note 1
Ciss Coss Crss
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off) tf
Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 50mA RG = 50 (External)
Qg(on) Qgs Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 50mA
RthJC
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = IS, VGS = 0V, Note 1
trr
IF = 0.75A, -di/dt = 100A/μs,
VR = 25V
Note 1: Pulse test, t 300s, duty cycle, d 2%.
Characteristic Values Min. Typ. Max.
0.16
S
54.0
pF
6.9
pF
2.0
pF
12
ns
12
ns
40
ns
28
ns
6.9
nC
1.8
nC
3.0
nC
5C/W
Characteristic Values Min. Typ. Max.
100 mA 300 mA 1.8 V 1.5 μs
IXTU01N100 IXTY01N100
TO-251 Outline
1. Gate
2.Drain
3. Source 4. Drain
Dim.
A A1 b b1 b2 c c1 D E e e1 H L L1 L2
Millimeter Min. Max.
2.19 2.38 0.89 1.14
0.64 0.89 0.76 1.14 5.21 5.46
0.46 0.58 0.46 0.58
5.97 6.22
6.35 6.73 2.28 BSC 4.57 BSC
17.02 17.78
8.89 9.65 1.91 2.28 0.89 1.27
Inches Min. Max.
.086 .094 0.35 .045
.025 .035 .030 .045 .205 .215
.018 .023 .018 .023
.235 .245
.250 .265 .090 BSC .180 BSC
.670 .700
.350 .380 .075 .090 .035 .050
TO-252 AA Outline
E
A
b3
L3
c2
4
L4 1 2 3 L1
b2 e ee11 OPTIONAL
A1 H
A2
L
L2
c
0 5.55MIN
1 - Gate 2,4 - Drain 3 - Source
4 6.40
6.50MIN
BOTTOM VIEW
2.85MIN
2.28
1.25MIN
LAND PATTERN RECOMMENDATION
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961 5,063,307 5,187,117
5,237,481 5,381,025 5,486,715
6,162,665 6,259,123 B1 6,306,728 B1
6,404,065 B1 6,534,343 6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
ID - MilliAmperes
ID - MilliAmperes
200 180 160 140 120 100
80 60 40 20
0 0
Fig. 1. Output Characteristics @ TJ = 25oC
VGS = 10V 6V
5V
2
4
6
8
10
12
14
VDS - Volts
200 180 160 140 120 100
80 60 40 20
0 0
Fig. 2. Output Characteristics @ TJ = 125oC
VGS = 10V 6V
5V
5
10
15
20
25
30
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 50mA Value
vs. Drain Current
3.0
VGS = 10V 2.6
TJ = 125oC
2.2
1.8
TJ = 25oC
1.4
1.0
0.6 0
50 100 150 200 250 300 350 400 450 500
ID - MilliAmperes
ID - MilliAmperes
RDS(on) - Normalized
ID - MilliAmperes
IXTU01N100 IXTY01N100
Fig. 2. ExtendedOutput Characteristics @ TJ = 25oC
500
450
VGS = 10V
400 6V
350
300
250
200
150
100
5V 50
0
0
5
10 15 20
25 30 35 40 45 50
VDS - Volts
Fig. 3. RDS(on) Normalized to ID = 50mA Value
vs. Junction Temperature
3.0
VGS = 10V 2.6
2.2 I D = 200mA
1.8
I D = 100mA 1.4
1.0
0.6
0.2
-50
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 5. Maximum Drain Current vs. Case Temperature
120
100
80
60
40
20
0
-50
-25
0
25
50
75
100
125
150
TC - Degrees Centigrade
RDS(on) - Normalized
© 2017 IXYS CORPORATION, All Rights Reserved
ID - MilliAmperes
Fig. 7. Input Admittance
160
140
VDS = 10V
120
100
80
60
TJ = 125oC
40
20
0
3.2
3.6
4.0
4.4
4.8
VGS - Volts
TJ = 25oC
5.2
5.6
400 350 300 250 200 150 100
50 0 0.3
Fig. 9. Forward Voltage Drop of Intrinsic Diode
TJ = 125oC
TJ = 25oC
0.4
0.5
0.6
0.7
0.8
0.9
VSD .