IXTY01N80

www.DataSheet4U.com High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N80 IXTY 01N80 VDSS ID25 RDS(on) = 800 V = 100mA = 50 Ω Preliminary data sheet Symbol Test Conditions Maximum Ratings 01N100 800 800 ±20 ±30 100 400 25 -55 ... +150 150 -55 ... +150 V V TO-251 AA VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM Tstg TL Weight TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C; TJ = 25°C to 150°C TC = 25°C, pulse width limited by max. TJ TC = 25°C G V V mA mA W °C °C °C °C g D S D (TAB) TO-252 AA 1.6 mm (0.063 in) from case for 5 s 300 0.8 G S D (TAB) G = Gate, S = Source, D = Drain, TAB = Drain Features Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2 4.5 ±50 TJ = 25°C TJ = 125°C 10 200 50 V V V nA µA µA Ω l VDSS VGS(th) IGSS IDSS RDS(on) V GS = 0 V, ID = 25 µA V DS = VGS, ID = 25 µA VGS = ±20 VDC, VDS = 0 VDS = 0.8 VDSS VGS = 0 V International standard packages JEDEC TO-251 AA, TO-252 AA l Low RDS (on) HDMOSTM process l l Rugged polysilicon gate cell structure Fast switching times Applications l l l l Level shifting Triggers Solid state relays Current regulators V GS = 10 V, ID = ID25 Pulse test, t ≤ 300 ms, duty cycle d ≤ 2 % © 2001 IXYS All rights reserved 98841 (5/01) IXTU 01N80 IXTY 01N80 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 140 60 V GS = 0 V, VDS = 25 V, f = 1 MHz 8.0 2.0 12 V GS = 10 V, VDS = 50...