www.DataSheet4U.com
High Voltage MOSFET
N-Channel, Enhancement Mode
IXTU 01N80 IXTY 01N80
VDSS ID25
RDS(on)
= 800 V = 100mA = 50 Ω
Preliminary data sheet
Symbol
Test Conditions
Maximum Ratings 01N100 800 800 ±20 ±30 100 400 25 -55 ... +150 150 -55 ... +150 V V
TO-251 AA
VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM Tstg TL Weight
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C; TJ = 25°C to 150°C TC = 25°C, pulse width limited by max. TJ TC = 25°C
G
V V mA mA W °C °C °C °C g
D S
D (TAB)
TO-252 AA
1.6 mm (0.063 in) from case for 5 s
300 0.8
G S
D (TAB) G = Gate, S = Source, D = Drain, TAB = Drain
Features Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2 4.5 ±50 TJ = 25°C TJ = 125°C 10 200 50 V V V nA µA µA Ω
l
VDSS VGS(th) IGSS IDSS RDS(on)
V GS = 0 V, ID = 25 µA V DS = VGS, ID = 25 µA VGS = ±20 VDC, VDS = 0 VDS = 0.8 VDSS VGS = 0 V
International standard packages JEDEC TO-251 AA, T.