IXTU01N100D

Depletion Mode MOSFET N-Channel IXTY01N100D IXTU01N100D IXTP01N100D D G S Symbol VDSX VDGX VGSX VGSM IDM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C Continuous Transient TC = 25C, Pulse Width Limited by TJ TC = 25C TA = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220) TO-252 TO-251 TO-220 Maximum Ratings 1000 V 1000 V 20 V 30 V 400 mA 25 W 1.1 W - 55 ... +150 C 150 C - 55 ... +150 C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 0.35 g 0.40 g 3.00 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSX VGS = -10V, ID = 25A VGS(off) VDS = 25V, ID = 25A IGSX VGS = 20V, VDS = 0V IDSX(off) VDS = VDSX, VGS = -10V RDS(on) ID(on) VGS = 0V, ID = 50mA, Note 1 VGS = 0V, VDS = 25V, Note 1 TJ = 125C Characteristic Values Min. Typ. Max. 1000 V - 2.0 - 4.5 V 100 nA 10 A 250 A 50 80  400 mA VDSX =  RDS(on) 1000V 80 TO-252 (IXTY) G S D (Tab) TO-251 (IXTU) G D S TO-220 (IXTP) D (Tab) G DS D (Tab) G = Gate D = Drain S = Source Tab = Drain Features Normally ON Mode  International Standard Packages  Low RDS(on) HDMOSTM Process Rugged Polysilicon Gate Cell Structure Fast Switching Speed Advantages Easy to Mount Space Savings High Power Density Applications Level Shifting Triggers Solid State Relays Current Regulators ©2019 IXYS CORPORATION, All Rights Reserved D...