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IXTP01N100D Dataheets PDF



Part Number IXTP01N100D
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description N-Channel MOSFET
Datasheet IXTP01N100D DatasheetIXTP01N100D Datasheet (PDF)

Depletion Mode MOSFET N-Channel IXTY01N100D IXTU01N100D IXTP01N100D D G S Symbol VDSX VDGX VGSX VGSM IDM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C Continuous Transient TC = 25C, Pulse Width Limited by TJ TC = 25C TA = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220) TO-252 TO-251 TO-220 Maximum Ratings 1000 V 1000 V 20 V 30 V 400 mA 25 W 1.1 W - 55 ... +150 C 150 C .

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Depletion Mode MOSFET N-Channel IXTY01N100D IXTU01N100D IXTP01N100D D G S Symbol VDSX VDGX VGSX VGSM IDM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C Continuous Transient TC = 25C, Pulse Width Limited by TJ TC = 25C TA = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220) TO-252 TO-251 TO-220 Maximum Ratings 1000 V 1000 V 20 V 30 V 400 mA 25 W 1.1 W - 55 ... +150 C 150 C - 55 ... +150 C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 0.35 g 0.40 g 3.00 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSX VGS = -10V, ID = 25A VGS(off) VDS = 25V, ID = 25A IGSX VGS = 20V, VDS = 0V IDSX(off) VDS = VDSX, VGS = -10V RDS(on) ID(on) VGS = 0V, ID = 50mA, Note 1 VGS = 0V, VDS = 25V, Note 1 TJ = 125C Characteristic Values Min. Typ. Max. 1000 V - 2.0 - 4.5 V 100 nA 10 A 250 A 50 80  400 mA VDSX =  RDS(on) 1000V 80 TO-252 (IXTY) G S D (Tab) TO-251 (IXTU) G D S TO-220 (IXTP) D (Tab) G DS D (Tab) G = Gate D = Drain S = Source Tab = Drain Features • Normally ON Mode • International Standard Packages • Low RDS(on) HDMOSTM Process • Rugged Polysilicon Gate Cell Structure • Fast Switching Speed Advantages • Easy to Mount • Space Savings • High Power Density Applications • Level Shifting • Triggers • Solid State Relays • Current Regulators ©2019 IXYS CORPORATION, All Rights Reserved DS98809F(5/19) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 100V, ID = 100mA, Note 1 Ciss Coss Crss VGS = -10V, VDS = 25V, f = 1MHz td(on) tr td(off) tf Resistive Switching Times VGS = 5V, VDS = 50V, ID = 50mA RG = 30 (External) Qg(on) Qgs Qgd VGS = 5V, VDS = 500V, ID = 50mA RthJC RthCS TO-220 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VSD IF = 100mA, VGS = -10V, Note 1 trr IF = 750mA, -di/dt = 100A/s VR = 25V, VGS = -10V Characteristic Values Min. Typ. Max. IXTY01N100D IXTU01N100D IXTP01N100D 100 200 mS 100 pF 12 pF 2 pF 7 ns 10 ns 34 ns 64 ns 5.8 nC 3.6 nC 0.4 nC 5.0 C/W 0.50 C/W Characteristic Values Min. Typ. Max. 1.5 V 1.5 μs Note 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 by one or more of the following U.S. patents: 4,860,072 5,017,508 4,881,106 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 ID - MilliAmperes ID - Amperes Fig. 1. Output Characteristics @ TJ = 25oC 100 VGS = 5.0V 90 0V 80 - 0.5V 70 60 -1.0V 50 40 -1.5V 30 20 - 2.0V 10 0 - 3.0V 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 VDS - V.


IXTU01N100D IXTP01N100D GWM120-0075P3


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