Document
Depletion Mode MOSFET
N-Channel
IXTY01N100D IXTU01N100D IXTP01N100D
D
G S
Symbol VDSX VDGX VGSX VGSM IDM PD
TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C Continuous Transient TC = 25C, Pulse Width Limited by TJ TC = 25C TA = 25C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220) TO-252 TO-251 TO-220
Maximum Ratings
1000
V
1000
V
20
V
30
V
400
mA
25
W
1.1
W
- 55 ... +150
C
150
C
- 55 ... +150
C
300
°C
260
°C
1.13 / 10
Nm/lb.in.
0.35
g
0.40
g
3.00
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSX
VGS = -10V, ID = 25A
VGS(off)
VDS = 25V, ID = 25A
IGSX
VGS = 20V, VDS = 0V
IDSX(off)
VDS = VDSX, VGS = -10V
RDS(on) ID(on)
VGS = 0V, ID = 50mA, Note 1 VGS = 0V, VDS = 25V, Note 1
TJ = 125C
Characteristic Values Min. Typ. Max.
1000
V
- 2.0
- 4.5 V
100 nA
10 A 250 A
50
80
400
mA
VDSX = RDS(on)
1000V 80
TO-252 (IXTY)
G S
D (Tab)
TO-251 (IXTU)
G D S
TO-220 (IXTP)
D (Tab)
G DS
D (Tab)
G = Gate D = Drain S = Source Tab = Drain
Features
• Normally ON Mode • International Standard Packages • Low RDS(on) HDMOSTM Process • Rugged Polysilicon Gate Cell Structure • Fast Switching Speed
Advantages
• Easy to Mount • Space Savings • High Power Density
Applications
• Level Shifting • Triggers • Solid State Relays • Current Regulators
©2019 IXYS CORPORATION, All Rights Reserved
DS98809F(5/19)
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs
VDS = 100V, ID = 100mA, Note 1
Ciss Coss Crss
VGS = -10V, VDS = 25V, f = 1MHz
td(on) tr td(off) tf
Resistive Switching Times VGS = 5V, VDS = 50V, ID = 50mA RG = 30 (External)
Qg(on) Qgs Qgd
VGS = 5V, VDS = 500V, ID = 50mA
RthJC RthCS
TO-220
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
VSD
IF = 100mA, VGS = -10V, Note 1
trr
IF = 750mA, -di/dt = 100A/s VR = 25V, VGS = -10V
Characteristic Values Min. Typ. Max.
IXTY01N100D IXTU01N100D IXTP01N100D
100
200
mS
100
pF
12
pF
2
pF
7
ns
10
ns
34
ns
64
ns
5.8
nC
3.6
nC
0.4
nC
5.0 C/W
0.50
C/W
Characteristic Values Min. Typ. Max.
1.5 V
1.5 μs
Note 1. Pulse test, t 300s, duty cycle, d 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961 5,063,307 5,187,117
5,237,481 5,381,025 5,486,715
6,162,665 6,259,123 B1 6,306,728 B1
6,404,065 B1 6,534,343 6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
ID - MilliAmperes
ID - Amperes
Fig. 1. Output Characteristics @ TJ = 25oC
100
VGS = 5.0V
90
0V
80
- 0.5V 70
60 -1.0V
50
40 -1.5V
30
20 - 2.0V
10
0
- 3.0V
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
VDS - V.