GWM120-0075P3

www.DataSheet4U.com GWM 120-0075P3 Three phase full bridge with Trench MOSFETs in DCB isolated high current package L+ G3 G1 S3 S1 L1 L2 L3 G4 G2 S4 S2 G6 S6 LS5 G5 VDSS = 75 V ID25 = 125 A RDSon typ. = 3.7 mΩ Pins Gate Pow s er Pin MOSFETs Symbol VDSS VGS ID25 ID90 IF25 IF90 TC = 25°C TC = 90°C TC = 25°C (diode) TC = 90°C (diode) Conditions TVJ = 25°C to 150°C Maximum Ratings 75 ±20 125 95 130 85 V V A A A A Applications AC drives in automobiles - electric power steering - starter generator in industrial vehicles - propulsion drives - fork lift drives in battery supplied equipment Features MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode package: - high level of integration - high current capability - auxiliary terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB ceramic base plate with optimized heat transfer Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. TVJ = 25°C TVJ = 125°C 2 0.1 0.2 91 19 28 36 56 130 50 0.9 90 1.1 1.4 3.7 6.4 4.5 m Ω mΩ 4 1 V µA mA µA nC nC nC ns ns ns ns V ns 0.85 K/W K/W RDSon VGSth IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf VF t rr RthJC RthJH on chip level at VGS = 10 V; ID = 60 A VDS = 20 V; ID = 1 mA VDS = VDSS; VGS = 0 V; TVJ = 25°C TVJ = 125°C VGS = ±20 V; VDS = 0 V VGS= 10 V; VDS = 60 V; ID = 25 A VGS= 10 V; VDS = 30 V; ID = 25 A; RG = 10 Ω (diode) IF = 60 A; VGS= 0 V (diode) IF = 20 A; -di/dt = 100 A/µs...