www.DataSheet4U.com
SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristi...
www.DataSheet4U.com
SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies.
KHB9D0N50P1/F1
N CHANNEL MOS FIELD EFFECT
TRANSISTOR
A
O C F
E
G B Q
I
FEATURES
VDSS(Min.)= 500V, ID= 9A Drain-Source ON Resistance : RDS(ON)=0.8 @VGS =10V Qg(typ.) =34.6nC
K M L J D N N
P
H
1
2
3
DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B 1.3+0.1/-0.05 C _ 0.1 D 0.8 + _ 0.2 E 3.6 + _ 0.1 F 2.8 + 3.7 G H 0.5+0.1/-0.05 1.5 I _ 0.3 13.08 + J K 1.46 _ 0.1 1.4 + L _ 0.1 1.27+ M _ 0.2 2.54 + N _ 0.2 4.5 + O _ 0.2 2.4 + P _ 0.2 9.2 + Q
1. GATE 2. DRAIN 3. SOURCE
MAXIMUM RATING (Tc=25
CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above25
)
RATING SYMBOL KHB9D0N50P1 KHB9D0N50F1 VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg 135 1.07 150 -55 150 9 5.4 36 360 13.5 4.5 44 0.35 500 30 9* 5.4* 36* mJ
K
TO-220AB
UNIT V
A C F O E G P
V
A
B
mJ V/ns W W/
L J D M M H Q
DIM MILLIMETERS _ 0.2 10.16 + A _ 0.2 15.87 + B _ 0.2 C 2.54 + _ 0.1 D 0.8 + _ 0.1 E 3.18 + _ 0.1 F 3.3 + _ 0.2 12.57 + G _ 0.1 0.5 + H J 13.0 MAX _ 0.1 K 3.23 + L 1.47 MAX _ 0.2 2.54 + M _ 0.2 N 4.7 + _ 0.2 ...