IXFN130N30

www.DataSheet4U.com HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFN 130N30 D VDSS = 300 V ID25 = 130 A RDS(on) = 22 mΩ trr < 250 ns G S S Symbol VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C Terminal (current limit) TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 300 300 ± 20 ± 30 130 100 520 100 85 4 5 700 -55 ... +150 150 -55 ... +150 V V V V A A A A mJ J V/ns miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features W °C °C °C V~ V~ International standard packages miniBLOC, with Aluminium nitride Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) Low package inductance Fast intrinsic Rectifier Applications rated isolation 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s 2500 3000 Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 300 2 4 ± 200 TJ = 25°C TJ = 125°C 100 2 V V nA µA mA DC-DC converters Battery chargers Switched-mode and resonant-mode DC choppers...