NTTD1P02R2

www.DataSheet4U.com NTTD1P02R2 Power MOSFET −1.45 Amps, −20 Volts P−Channel Enhancement Mode Dual Micro8 Package Features Ultra Low RDS(on) Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature Dual Micro8 Surface Mount Package Diode Exhibits High Speed, Soft Recovery Micro8 Mounting Information Provided http://onsemi.com −1.45 AMPERES −20 VOLTS 160 mW @ VGS = −4.5 Dual P−Channel D Applications Power Management in Portable and Battery−Powered Products, i.e.: Computers, Printers, PCMCIA Cards, Cellular and Cordless Telephones MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Thermal Resistance − Junction−to−Ambient (Note 1.) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 70°C Pulsed Drain Current (Note 3.) Thermal Resistance − Junction−to−Ambient (Note 2.) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 70°C Pulsed Drain Current (Note 3.) Operating and Storage Temperature Range Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = −20 Vdc, VGS = −4.5 Vdc, Peak IL = −3.5 Apk, L = 5.6 mH, RG = 25 Ω) Maximum Lead Temperature for Soldering Purposes for 10 seconds Symbol VDSS VGS RθJA PD ID ID IDM RθJA PD ID ID IDM TJ, Tstg EAS Value −20 "8.0 250 0.50 −1.45 −1.15 −10 125 1.0 −2.04 −1.64 −16 −55 to +150 35 Unit V V G S °C/W W A A A °C/W W A A...