SI3424DV

www.DataSheet4U.com Si3424DV New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.028 @ VGS = 10 V 0.038 @ VGS = 4.5 V ID (A) 6.7 5.7 (1, 2, 5, 6) D TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (4) S N-Channel MOSFET 2.85 mm ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 5 secs 30 "20 6.7 Steady State Unit V 5.0 4.0 30 A 1.0 1.14 0.73 –55 to 150 W _C ID IDM IS PD TJ, Tstg 5.4 1.7 2.0 1.3 THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71317 S-02157—Rev. A, 02-Oct-00 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 40 90 25 Maximum 62.5 110 30 Unit _C/W 1 Si3424DV Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 7...