2SC5755

www.DataSheet4U.com 2SC5755 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5755 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications · · · High DC current gain: hFE = 400 to 1000 (IC = 0.2 A) Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) High-speed switching: tf = 25 ns (typ.) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC t = 10 s DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC (Note) Tj Tstg Rating 20 10 7 2 3.5 200 500 750 150 -55 to 150 Unit V V V A mA mW °C °C JEDEC JEITA TOSHIBA ― ― 2-3S1C Weight: 0.01 g (typ.) Note: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 2 645 mm ) Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Rise time Switching time Storage time Fall time Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) tr tstg tf Test Condition VCB = 20 V, IE = 0 VEB = 7 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 0.2 A VCE = 2 V, IC = 0.6 A IC = 0.6 A, IB = 12 mA IC = 0.6 A, IB = 12 mA See Figure 1 circuit diagram. VCC ≈ 6 V, RL = 10 W IB1 = -IB2 = 12 mA Min ¾ ¾ 10 400 200 ¾ ¾ ¾ ¾ ¾ Typ. ¾ ¾ ¾ ¾ ¾ ¾ ¾ 60 215 25 Max 100 100 ¾ 1000 ¾ 0...