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2SC5758

Hitachi Semiconductor

Silicon NPN Epitaxial Type Transistor

www.DataSheet4U.com 2SC5758 Silicon NPN Epitaxial VHF / UHF Wide band amplifier ADE-208-1397D(Z) Rev.4 Jul. 2001 Featu...


Hitachi Semiconductor

2SC5758

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www.DataSheet4U.com 2SC5758 Silicon NPN Epitaxial VHF / UHF Wide band amplifier ADE-208-1397D(Z) Rev.4 Jul. 2001 Features Super compact package: MFPAK (1.4 x 0.8 x 0.59 mm) Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is “WF–“. 2SC5758 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 10 3.5 1.5 80 80 150 –50 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Symbol V(BR)CBO ICBO ICEO IEBO hFE Cob fT PG NF Min 10    80 0.65 6 10  Typ     100 0.95 8 13 1.0 Max  600 200 100 130 1.25   2.0 Unit V nA nA nA V pF GHz dB dB Test conditions IC = 10 µA, IE = 0 VCB = 10 V, IE = 0 VCE = 3.5 V, RBE = Infinite VEB = 1.5 V, IC = 0 VCB = 1 V, IC = 5 mA VCB = 1 V, IE = 0, f = 1 MHz VCE = 1 V, IC = 5 mA VCE = 1 V, IC = 5 mA, f = 900 MHz VCE = 1 V, IC = 5 mA, f = 900 MHz Rev.4, Jul. 2001, page 2 of 10 2SC5758 Collector Power Dissipation Curve 100 Pc (mW) Typical Output Characteristics 50 500 µA 450 µA 400 µA 350 µA IC (mA) 80 40 300 250 µA µA Collector Power Dissipation 60 30 Collector Current A 200 µ 4...




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