Static RAM. HM6208H Datasheet

HM6208H RAM. Datasheet pdf. Equivalent

HM6208H Datasheet
Recommendation HM6208H Datasheet
Part HM6208H
Description High Speed CMOS Static RAM
Feature HM6208H; www.DataSheet4U.com HM6208H Series 65,536-word × 4-bit High Speed CMOS Static RAM Features • Singl.
Manufacture Hitachi Semiconductor
Datasheet
Download HM6208H Datasheet





Hitachi Semiconductor HM6208H
www.DataSheet4U.com
HM6208H Series
65,536-word × 4-bit High Speed CMOS Static RAM
Features
Single 5 V supply and high density 24-pin package
High speed: Access time 25/35/45 ns (max)
Low power
Operation: 300 mW (typ)
Standby: 100 µW (typ)
30 µW (typ) (L-version)
Completely static memory required
No clock or timing strobe required
Equal access and cycle time
Directly TTL compatible: All inputs and outputs
Battery backup operation capability (L-version)
Ordering Information
Type No.
HM6208HP-25
HM6208HP-35
HM6208HP-45
HM6208HLP-25
HM6208HLP-35
HM6208HLP-45
HM6208HJP-25
HM6208HJP-35
HM6208HJP-45
HM6208HLJP-25
HM6208HLJP-35
HM6208HLJP-45
Access Time
25 ns
35 ns
45 ns
25 ns
35 ns
45 ns
25 ns
35 ns
45 ns
25 ns
35 ns
45 ns
Package
300-mil, 24-pin plastic DIP (DP-24NC)
300-mil, 24-pin SOJ (CP-24D)



Hitachi Semiconductor HM6208H
HM6208H Series
Pin Arrangement
Pin Description
Pin Name
A0–A15
I/O1–I/O4
CS
WE
VCC
VSS
A0 1
A1 2
A2 3
A3 4
A4 5
A5 6
A6 7
A7 8
A8 9
A9 10
CS 11
VSS 12
24 VCC
23 A15
22 A14
21 A13
20 A12
19 A11
18 A10
17 I/O1
16 I/O2
15 I/O3
14 I/O4
13 WE
(Top view)
Function
Address
lnput/output
Chip select
Write enable
Power supply
Ground
2



Hitachi Semiconductor HM6208H
Block Diagram
A14
A15
A0
A1
A2
A3
A4
A5
I/O1
I/O2
I/O3
I/O4
HM6208H Series
Row
decoder
Memory array
256 × 1024
VCC
VSS
Input
data
control
Column I/O
Column decoder
A13 A12 A11 A10 A9 A8 A7 A6
CS
WE
Truth Table
CS WE
H×
LH
LL
Note: ×: Don’t care.
Mode
Not selected
Read
Write
VCC Current
ISB, ISB1
I CC
I CC
I/O Pin
High-Z
Dout
Din
Ref. Cycle
Read cycle
Write cycle
Absolute Maximum Ratings
Parameter
Symbol
Voltage on any pin relative to VSS
Power dissipation
Operating temperature range
Vin
PT
Topr
Storage temperature range
Tstg
Storage temperature range under bias
Tbias
Note: 1. Vin min = –2.5 V for pulse widths 10 ns.
Value
–0.5*1 to +7.0
1.0
0 to +70
–55 to +125
–10 to +85
Unit
V
W
°C
°C
°C
3





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