IRFC2907B

www.DataSheet4U.com PD - 93777 IRFC2907B HEXFET® l Power MOSFET Die in Wafer Form D 100% Tested at Probe l Available in Tape and Reel, Chip Pack, Sawn on Film and Gel Pack** l Ultra Low On-Resistance Electrical Characteristics * Parameter V(BR)DSS RDS(on)*** VGS(th) IDSS IGSS TJ TSTG Description Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Leakage Current Operating Junction and Storage Temperature Range G S 75V RDS(on) = 2.5mΩ (typ.)∗∗∗ 6" Wafer Test Conditions VGS = 0V, ID = 250µA VGS = 10V, ID = 110A V DS = VGS, ID = 250µA VDS = 75V, VGS = 0V, TJ = 25°C V GS = ±20V Min Typ. Max 75V ––– ––– ––– 2.5mΩ 4.5mΩ 2.0 ––– 4.0V ––– ––– 20µA ––– ––– ± 200nA -55°C to 175°C Max. Mechanical Data Nominal Back Metal Composition, Thickness: Nominal Front Metal Composition, Thickness: Dimensions: Wafer Diameter: Wafer Thickness: Relevant Die Mechanical Drawing Number Minimum Street Width Reject Ink Dot Size Recommended Storage Environment: Recommended Die Attach Conditions: Reference Packaged Part Cr-NiV-Ag ( 1kA°-2kA°-5kA° ) 100% Al (0.008 mm) .257" x .360" [ 6.53 mm x 9.14 mm ] 150 mm, with 100 flat 0.254 mm ± 0.025 mm 01-5403 0.107 mm 0.51 mm Diameter Minimum Store in original container, in dessicated nitrogen, with no contamination For optimum electrical results, die attach temperature should not exceed 300 °C IRFP2907 NOT ES : 1. AL L DIMENS IONS ARE S HOWN IN MILL IMET ERS [INCHES ]....