SM2G50US60

www.DataSheet4U.com Preliminary SM2G50US60 FEATURES ' High Speed Switching ' Low Conduction Loss : VCE(sat) = 2.1 V (typ) ' Fast & Soft Anti-Parallel FWD ' Short circuit rated : Min 10uS at Tc=100 IGBT MODULE & APPLICATIONS ' ' ' ' ' Package code : 7-PM-AA G2 E2 C2E1 E2 C1 E1 G1 General Purpose Inverters Welding Machine Induction Heating UPS , CVCF Robotics , Servo Controls Internal Circuit Diagram ABSOLUTE MAXIMUM RATINGS (Tc = 25 Symbol VCES VGES IC ICM (1) IF IFM PC Tj Tstg Viso ) Rating Units V V A A A A Characteristics Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ Tc = 25 Pulsed Collector Current & & 20 50 100 50 100 250 -40 ~ 150 -40 ~ 125 2500 2.0 2.0 600 Diode Continuous Forward Current @ Tc = 25 Diode Maximum Forward Current Maximum Power Dissipation @Tc = 25 Operating Junction Temperature Storage Temperature Range Isolation Voltage @ AC 1 min & & & V N.m N.m W Mounting Torque @ Power terminals screw :M5 Mounting screw :M5 Notes: (1) Repetitive Rating : Pulse width Limited by Max.Junction Temperature Rev.B ©1999 Fairchild Semiconductor Corporation Preliminary SM2G50US60 ELECTRICAL CHARACTERISTICS (IGBT PART) (Tc=25 IGBT MODULE ,Unless Otherwise Specified) Characteristics C - E Breakdown Voltage Temperature Coeff. of Breakdown Voltage G - E threshold voltage Collector cutoff Current G - E leakage Current Collector to Emitter saturation voltage Symbol BVCES Test Conditions VGE = 0V , IC = 250 Min 600 - Typ Max 0.6 ...