IRG4MC30F BIPOLAR TRANSISTOR Datasheet

IRG4MC30F Datasheet, PDF, Equivalent


Part Number

IRG4MC30F

Description

Fast Speed IGBT - INSULATED GATE BIPOLAR TRANSISTOR

Manufacture

International Rectifier

Total Page 8 Pages
Datasheet
Download IRG4MC30F Datasheet


IRG4MC30F
INSULATED GATE BIPOLAR TRANSISTOR
PD-94313D
IRG4MC30F
Fast Speed IGBT
Features
C
• Electrically Isolated and Hermetically Sealed
• Simple Drive Requirements
• Latch-proof
• Fast Speed Operation 3 kHz - 8 kHz
• High Operating Frequency
• Switching-loss Rating includes all "tail" losses
• Ceramic Eyelets
G
E
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
IR Hi-Rel Generation 3 IGBT's
Insulated Gate Bipolar Transistors (IGBTs) from
International Rectifier have higher usable current
densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements
of the familiar power MOSFET. They provide
substantial benefits to a host of high-voltage, high-
current applications.
VCES = 600V
VCE(on) max =1.7V
@VGE = 15V, IC = 15A
TO-254AA
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current À
Clamped Inductive Load Current Á
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
Max.
600
28
15
112
112
± 20
75
30
-55 to + 150
300 (0.063in./1.6mm from case for 10s)
9.3 (typical)
Units
V
A
V
W
°C
g
Thermal Resistance
Parameter
RthJC
Junction-to-Case
www.irf.com
Min Typ Max Units
— — 1.67 °C/W
Test Conditions
1
01/10/13

IRG4MC30F
IRG4MC30F
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage 600 ––– ––– V VGE = 0V, IC = 1.0 mA
V(BR)ECS
Emitter-to-Collector Breakdown Voltage ƒ 18 ––– ––– V VGE = 0V, IC = 1.0 A
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage ––– 0.63 ––– V/°C VGE = 0V, IC = 1.0 mA
––– ––– 1.7
IC = 15A
VGE = 15V
VCE(ON)
Collector-to-Emitter Saturation Voltage
––– ––– 2.2 V IC = 28A
See Fig.2, 5
––– ––– 2.7
IC = 15A , TJ = 125°C
VGE(th)
Gate Threshold Voltage
3.0 ––– 6.0
VCE = VGE, IC = 1.0 mA
VGE(th)/TJ Temperature Coeff. of Threshold Voltage ––– -11 ––– mV/°C VCE = VGE, IC = 250 µA
gfe Forward Transconductance „
14 ––– ––– S VCE 15V, IC = 15A
ICES
Zero Gate Voltage Collector Current
––– ––– 50 µA VGE = 0V, VCE = 480V
––– ––– 1000
VGE = 0V, VCE = 480V, TJ = 125°C
IGES Gate-to-Emitter Leakage Current
––– ––– ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Ets
td(on)
tr
td(off)
tr
Ets
LC + LE
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Rise Time
Total Switching Loss
Total Inductance
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
––– ––– 77
IC = 15A
––– ––– 12 nC VCC = 300V
See Fig. 8
––– ––– 24
VGE = 15V
––– ––– 42
TJ = 25°C
––– ––– 30
––– ––– 300
ns
IC = 15A, VCC = 480V
VGE = 15V, RG = 7.5
––– ––– 300
Energy losses include "tail"
––– ––– 2.0 mJ See Fig. 10, 11, 13, 14
––– ––– 42
TJ = 125°C,
––– ––– 20 ns IC = 15A, VCC = 480V
––– ––– 450
VGE = 15V, RG = 7.5
––– ––– 550
Energy losses include "tail"
––– ––– 3.0 mJ See Fig. 13, 14
––– 6.8 ––– nH Measured from Collector lead (6mm/
0.25in. from package) to Emitter
lead (6mm / 0.25in. from package)
––– 1100 –––
––– 74 –––
––– 14 –––
VGE = 0V
pF VCC = 30V
ƒ = 1.0MHz
See Fig. 7
Notes:
 Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See Fig. 13b )
‚ VCC = 80%(VCES), VGE = 20V, L = 100µH, RG = 7.5,
(See Fig. 13a)
ƒ Pulse width 80µs; duty factor 0.1%.
„ Pulse width 5.0µs, single shot.
2 www.irf.com


Features INSULATED GATE BIPOLAR TRANSISTOR PD-94 313D IRG4MC30F Fast Speed IGBT Feature s C • Electrically Isolated and Her metically Sealed • Simple Drive Requi rements • Latch-proof • Fast Speed Operation 3 kHz - 8 kHz • High Operat ing Frequency • Switching-loss Rating includes all "tail" losses • Ceramic Eyelets G E n-channel Benefits • Generation 4 IGBT's offer highest effic iency available • IGBT's optimized fo r specified application conditions • Designed to be a "drop-in" replacement for equivalent IR Hi-Rel Generation 3 I GBT's Insulated Gate Bipolar Transisto rs (IGBTs) from International Rectifier have higher usable current densities t han comparable bipolar transistors, whi le at the same time having simpler gate -drive requirements of the familiar pow er MOSFET. They provide substantial ben efits to a host of high-voltage, highcu rrent applications. VCES = 600V VCE(on ) max =1.7V @VGE = 15V, IC = 15A TO-254 AA Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE PD @ .
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