PHP36N03LT

www.DataSheet4U.com PHD/PHP36N03LT N-channel TrenchMOS logic level FET Rev. 02 — 8 June 2006 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features I Logic level compatible I Low gate charge 1.3 Applications I DC-to-DC converters I Switched-mode power supplies 1.4 Quick reference data I VDS ≤ 30 V I RDSon ≤ 17 mΩ I ID ≤ 43.4 A I Ptot ≤ 57.6 W 2. Pinning information Table 1. Pin 1 2 3 mb Pinning Description gate (G) drain (D) source (S) mounting base; connected to drain G [1] Simplified outline mb mb Symbol D 2 1 3 1 2 3 mbb076 S SOT428 (DPAK) [1] SOT78 (3-lead TO-220AB) It is not possible to make a connection to pin 2 of the SOT428 package. Philips Semiconductors PHD/PHP36N03LT N-channel TrenchMOS logic level FET 3. Ordering information Table 2. Ordering information Package Name PHD36N03LT PHP36N03LT DPAK SC-46 Description plastic single-ended surface-mounted package; 3 leads (one lead cropped) plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB Version SOT428 SOT78 Type number 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage drain-gate voltage (DC) gate-source voltage drain current peak drain current total power dissipation storage temperature junction temp...