IRF3704ZS

www.DataSheet4U.com PD - 94756 Applications l High Frequency Synchronous Buck Converters for Computer Processor Power HEXFET® Power MOSFET IRF3704Z IRF3704ZS IRF3704ZL Qg 8.7nC VDSS RDS(on) max 20V 7.9m: Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current TO-220AB IRF3704Z D2Pak IRF3704ZS TO-262 IRF3704ZL Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 20 ± 20 67 47 260 57 28 0.38 -55 to + 175 300 (1.6mm from case) 10 lbf in (1.1N m) Units V A ™ h h Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw W W/°C °C Thermal Resistance Parameter RθJC RθCS RθJA RθJA Junction-to-Case f y y i Typ. Max. 2.65 ––– 62 40 Units °C/W Case-to-Sink, Flat Greased Surface Junction-to-Ambient fià f ––– 0.50 ––– ––– Junction-to-Ambient (PCB Mount) gi Notes  through ‡ are on page 12 www.irf.com 1 3/1/04 IRF3704Z/S/L Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp...