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$GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V ♦ Lower RDS(ON): 0.214Ω (Typ.)
1 2 3
IRF644A
BVDSS = 250 V RDS(on) = 0.28Ω ID = 14 A
TO-220
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25°C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds
(2) (1) (1) (3) (1)
Value 250 14 8.9 56 ±30 490 14 13.9 4.8 139 1.11 - 55 to +150
Units V A A V mJ A mJ V/ns W W/°C
°C 300
Thermal Resistance
Symbol RθJC RθCS RθJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -Max. 0.9 -62.5 °C/W Units
Rev. B
©1999 Fairchild Semiconductor Corporation
IRF644A
Electrical Characteristics (TC=25°C unless otherwise specified)
Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain ( Miller ) Charge Min. Typ. Max. Units 250 -2.0 -----------------0.28 ------8.65 180 80 17 17 74 32 46 9.3 19.5 --4.0 100 -100 10 100 0.28 -210 95 50 50 160 80 61 --nC ns µA Ω Ω V V nA
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Test Condition VGS=0V,ID=250µA
V/° C ID=250µA VGS=30V VGS=-30V VDS=250V
See Fig 7
VDS=5V,ID=250µA
VDS=200V,TC=125°C VGS=10V,ID=7A VDS=40V,ID=7A
(4) (4)
1230 1600 pF
VGS=0V,VDS=25V,f =1MHz
See Fig 5
VDD=125V,ID=14A, RG=9.1Ω
See Fig 13
VDS=200V,VGS=10V, ID=14A
(4) (5)
See Fig 6 & Fig 12 (4) (5)
Source-Drain Diode Ratings and Characteristics
Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
(1) (4)
Min. Typ. Max. Units --------215 1.59 14 56 1.5 --A V ns µC
Test Condition Integral reverse pn-diode in the MOSFET TJ=25°C,IS=14A,VGS=0V TJ=25°C,IF=14A diF/dt=100A/µs
(4)
Notes; (1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature (2) L=4mH, IAS=14A, VDD=50V, RG=27Ω, Starting TJ =25°C (3) ISD ≤ 14A, di/dt ≤ 250A/µ s, VDD ≤ BV DSS , Starting TJ =25°C (4) Pulse Test: Pulse Width = 250µ s, Duty Cycle ≤ 2% (5) Essentially Independent of Operating Temperature
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IRF644A
Fig 2. Transfer Characteristics
Fig 1. Output Characteristics
VGS Top : 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V
ID , Drain Current [A]
ID , Drain Current [A]
1 1 0
1 1 0
0 1 0
0 1 0
1 5 0 oC 2 5 oC @N o t e s: 1 .V GS = 0 V 2 .V 0V DS = 4 u l s eT e s t 3 .2 5 0 µs P 6 8 1 0
@N o t e s: 1 .2 5 0 µs P u l s eT e s t 2 .T 5 oC C =2 1 0
-1 -1 1 0 0 1 0 1 1 0
-5 5 oC 1 0
-1
2
4
VDS , Drain-Source Voltage [V]
VGS , Gate-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
0 . 8
Fig 4. Source-Drain Diode Forward Voltage IDR , R eve rs eD ra in Cu rr ent [A]
RDS(on) , [ Ω ] Dr ainSour ce O n-Re sis tanc e
0 . 6
V 0V GS = 1
1 1 0
0 . 4
0 1 0
0 . 2
V 0V GS = 2 @N o t e :T 5 C J =2
o
1 5 0 oC 2 5 oC
-1 1 0 0 . 2
@N o t e s: 1 .V GS = 0 V 2 .2 5 0 µs P u l s eT e s t 0 . 8 1 . 0 1 . 2 1 . 4 1 . 6 1 . 8
0 . 0 0
1 5
3 0
4 5
6 0
0 . 4
0 . 6
I in C urre nt [A] D , Dra Fig 5. Capacitance vs. Drain-Source Voltage
2 0 0 0 C h o r t e d) iss= C gs+ C gd ( C ds= s C oss= C ds+ C gd C rss= C gd
VSD , S our ce -Dr ai n Vol ta ge [ V] Fig 6. Gate Charge vs. Gate-Source Voltage
1 0
V 0V DS = 5 V 2 5V DS = 1 V 0 0V DS = 2
1 5 0 0
1 0 0 0 C oss 5 0 0 C rss @N o t e s: 1 .V GS = 0 V 2 . f =1 M H z
VGS , Gate-Source Voltage [V]
C iss
Capacitance [pF]
5
@N o t e s :I 4 . 0A D =1 0 0 1 0 2 0 3 0 4 0 5 0
00 1 0
1 1 0
VDS , Drain-Source Voltage [V]
QG , Total Gate Charge [nC]
IRF644A
Fig 7. Breakdown Voltage vs. Temperature
1 . 2 3 . 0
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Fig 8. On-Resistance vs. Temperature
BVDSS , (Normalized) Drain-Source Breakdown Voltage
1 . 1
RDS(on) , (Normalized) Drain-Source On-Resistance
2 . 5
2 . 0
1 . 0
1 . 5
1 . 0 @N o t e s: 0V 1 .V GS = 1 . 0A 2 .I D =7 5 0 2 5 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 1 7 5
0 . 9
@N o t e s: 1 .V GS = 0 V 5 0 µA 2 .I D =2 5 0 2 5 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 1 7 5
0 . 5
0 . 8 7 5
0 . 0 7 5
TJ , Junction Temperature [oC]
TJ.