IXTH1N100

Advance Technical Information High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTH 1N100 IXTT 1N100 V DSS ID25 RDS(on) = 1000 V = 1.5 A = 11 Ω Symbol Test Conditions V DSS VDGR VGS VGSM ID25 I DM T J = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C T C = 25°C, pulse width limited by T JM IAR EAR EAS dv/dt PD T J TJM T stg Md Weight TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 18 Ω TC = 25°C Mounting torque (TO-247) TO-268 TO-247 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Ratings 1000 V 1000 V ±20 V ±30 V 1.5 A 6 A 1.5 A 6 mJ 200 mJ 3 V/ns 60 W -55 ... +150 °C 150 °C -55 ... +150 °C 1.13/10 Nm/lb.in. 4 g 6 g 300 °C Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VGS = 0 V, ID = 250 µA VDS = VGS, ID = 25 µA 1000 2.5 VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C VGS = 10 V, ID = 1.0A Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % V 4.5 V ±100 nA 25 µA 500 µA 11 Ω TO-247 AD (IXTH) D (TAB) TO-268 Case Style G S (TAB) G = Gate, S = Source, D = Drain, TAB = Drain Features Ÿ International standard packages Ÿ High voltage, Low RDS (on) HDMOSTM process Ÿ Rugged polysilicon gate cell structure Ÿ Fast switching times Applications Ÿ Switch-mode and resonant-mode power supplies Ÿ Flyback invert...