(IXFx3xN50Q) HiPerFET Power MOSFETs Q-Class
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HiPerFETTM Power MOSFETs Q-Class
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
VD...
Description
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HiPerFETTM Power MOSFETs Q-Class
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
VDSS IXFK/IXFX 30N50Q IXFK/IXFX 32N50Q
ID25
RDS(on)
500 V 30 A 0.16 Ω 500 V 32 A 0.15 Ω
trr ≤ 250 ns
Symbol VDSS VDGR VGS VGSM ID25 IDM
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM 30N50Q 32N50Q 30N50Q 32N50Q
Maximum Ratings 500 500 ±20 ±30 30 32 120 128 32 45 1500 5 416 -55 ... + 150 150 -55 ... + 150 V V V V A A A A A mJ mJ V/ns W °C °C °C °C Nm/lb.in. g g
PLUS 247TM (IXFK)
G
(TAB) D
TO-264 AA (IXFK)
IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
G D S
(TAB)
G = Gate S = Source
D = Drain TAB = Drain
Features
l l
1.6 mm (0.063 in) from case for 10 s Mounting torque TO-247 TO-268
300 1.13/10 6 4
l l
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2.5 4.5 ± 100 TJ = 25°C TJ = 125°C 32N50Q 30N50Q 100 1 0.15 0.16 V V nA µA mA Ω Ω
l
l
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 250 uA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 Note 1
IXYS advanced low Qg process Low gate charge and capacitances - easier to drive - faster switching International standard packages Low RDS (on) Unclamped Inductive Switching (UIS) rated Molding epoxies meet UL 94 V-0 flammabi...
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