TPCF8301

www.DataSheet4U.com TPCF8301 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8301 Notebook PC Applications Portable Equipment Applications Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) High forward transfer admittance: |Yfs| = 4.7 S (typ.) Low leakage current: IDSS = −10 µA (max) (VDS = −20 V) Enhancement model: Vth = −0.5 to −1.2 V (VDS = −10 V, ID = −200 µA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD (2) EAS IAR EAR Tch Tstg Rating −20 −20 ±8 −2.7 −10.8 1.35 1.12 W 0.53 0.33 1.2 −1.35 0.11 150 −55~150 mJ A mJ 1 °C °C 2 3 4 Unit V V V JEDEC A ― ― 2-3U1B JEITA TOSHIBA Single-device operation Drain power (Note 3a) dissipation (t = 5 s) (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation Drain power (Note 3a) dissipation (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) Single pulse avalanche energy Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) Channel temperature Storage temperature range (Note 4) Weight: 0.011 g (typ.) Circuit Configuration 8 7 6 5 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the ...