SSM6K201FE

www.DataSheet4U.com SSM6K201FE Tentative TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6K201FE Power Management Switch Applications High Speed Switching Applications 1.8 V drive Low ON-resistance: Ron = 186 mΩ (max) (@VGS = 1.8V) Ron = 119 mΩ (max) (@VGS = 2.5V) Ron = 91 mΩ (max) (@VGS = 4.0V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain–source voltage Gate–source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating 20 ± 12 2.3 4.6 500 150 −55~150 Unit V V A ES6 W °C °C 1, 2, 5, 6 : Drain 3 : Gate 4 : Source JEDEC JEITA TOSHIBA ― ― 2-2N1A Note 1: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 ) Weight: 3 mg (typ.) Electrical Characteristics (Ta = 25°C) Characteristic Drain–source breakdown voltage Drain cutoff current Gate leakage current Gate threshold voltage Forward transfer admittance Symbol V (BR) DSS V (BR) DSX IDSS IGSS Vth ⏐Yfs⏐ Test Condition ID = 1 mA, VGS = 0 ID = 1 mA, VGS = –12 V VDS = 20 V, VGS = 0 VGS = ± 12 V, VDS = 0 VDS = 3 V, ID = 1 mA VDS = 3 V, ID = 1.0 A ID = 1.0 A, VGS = 4.0 V Drain–source ON-resistance RDS (ON) ID = 0.5 A, VGS = 2.5 V ID = 0.2 A, VGS = 1.8 V Input capacitance Output capacitance Reverse transfer capacitance Switching time Turn-on time Turn-off time Ciss Coss Crss ton toff VDSF (Note2) (Note2) (Note2) (Note2) Min 20 10 ⎯ ⎯ 0.4 2.8 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ (Note2) ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ...