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PD - 97199
IRF6622
DirectFET Power MOSFET
l l l l l l l l l
RoHs Compliant Containing No Lead and Bromide Low Profile (<0.6 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized for Control FET Socket Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques
Typical values (unless otherwise specified)
VDSS Qg
tot
VGS Qgd
3.8nC
RDS(on) Qgs2
1.6nC
RDS(on) Qoss
7.7nC
25V max ±20V max 4.9mΩ@ 10V 6.8mΩ@ 4.5V
Qrr
7.1nC
Vgs(th)
1.8V
11nC
SQ
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MP
DirectFET ISOMETRIC
Description
The IRF6622 combines the latest HEXFET Power MOSFET Silicon Technology with the advanced DirectFET packaging to achieve the lowest combined on-state resistance and gate charge in a package that has a footprint similar to that of a Micro-8, and only 0.6mm profile. The IRF6622 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6622 has been optimized for parameters that are critical in synchronous buck including Rds(on) and gate charge.
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM EAS IAR
20
Typical RDS(on) (mΩ)
Max.
Units
V
Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current
g
e e f
Ãg
h
VGS, Gate-to-Source Voltage (V)
25 ±20 15 12 59 120 13 12
6.0 5.0 4.0 3.0 2.0 1.0 0.0 0 2 4 6 8 10 12 VDS= 20V VDS= 13V
A
mJ A
ID= 12A
15 10 5 T J = 25°C 0 3 4 5 6 7
ID = 15A
VDS= 5.0V
T J = 125°C
8
9
14
VGS, Gate -to -Source Voltage (V)
Notes: Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state.
Fig 1. Typical On-Resistance Vs. Gate Voltage
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.18mH, RG = 25Ω, IAS = 12A.
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1
04/04/06
IRF6622
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min.
25 ––– ––– ––– 1.35 ––– ––– ––– ––– ––– 55 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
Typ. Max. Units
––– 17 4.9 6.8 1.8 -5.9 ––– ––– ––– ––– ––– 11 2.5 1.6 3.8 3.1 5.4 7.7 1.8 13 87 14 5.6 1450 380 210 ––– ––– 6.3 8.9 2.35 ––– 1.0 150 100 -100 ––– 17 ––– ––– ––– ––– ––– ––– 3.1 ––– ––– ––– ––– ––– ––– ––– pF VGS = 0V VDS = 13V ƒ = 1.0MHz ns nC
Ω
Conditions
VGS = 0V, ID = 250µA V mV/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 15A c VGS = 4.5V, ID = 12A c V mV/°C µA nA S VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VDS = 13V, ID = 12A VDS = 13V nC VGS = 4.5V ID = 12A See Fig. 15 VDS = 16V, VGS = 0V VDD = 13V, VGS = 4.5V ID = 12A Clamped Inductive Load c VDS = VGS, ID = 25µA
Diode Characteristics
Parameter
IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) d Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ––– ––– ––– ––– ––– ––– 10 7.1 120 1.0 15 11 V ns nC
Min.
–––
Typ. Max. Units
––– 2.7 A
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 12A, VGS = 0V c TJ = 25°C, IF = 12A di/dt = 500A/µs c
Notes:
Pulse width ≤ 400µs; duty cycle ≤ 2%. Repetitive rating; pulse width limited by max. junction temperature.
2
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IRF6622
Absolute Maximum Ratings
PD @TA = 25°C PD @TA = 70°C PD @TC = 25°C TP TJ TSTG Power Dissipation Power Dissipation Power Dissipation Peak Soldering Temperature Operating Junction and Storage Temperature Range
f
Parameter
Max.
2.2 1.4 34 270 -40 to + 150
Units
W
°C
Thermal Resistance
Rθ.